Takeshi Kimura

The Underemphasized Concept of Crystal Polarity in Conventional Semiconductors and Its Device Application

Takashi Matsuoka, Takeshi Kimura, Tetsuya Suemitsu

This review focuses on nitrogen (N)‐polar GaN grown on (0001) sapphire substrates by metalorganic vapor phase epitaxy (MOVPE). Although N‐polar GaN growth is often considered challenging, the mechanisms behind its crystal growth are discussed in detail. For the growth of InN with …

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Treatment for pediatric short bowel syndrome with chronic kidney disease

Keita Takayama, Yuko Tazuke, Takeshi Kimura, Souji Ishimi et autres

症例は1歳男児. 在胎24週3日, 体重662 gで出生し, 生後3カ月 (修正27週) 時に腸回転異常による中腸軸捻転に対して, 小腸大量切除ならびに人工肛門造設術を施行され, 残存小腸長は20 cmとなった. 肝機能障害や黄疸, 腎機能障害が遷延し, 体重増加不良とともに全身四肢の多発骨折が出現したため, 長期的な栄養管理目的に当院転院となった. 入院時 (1歳3カ月: 修正7カ月), 体重は3.5 kgで, X線にて四肢の多発骨折を認めた. 血液生化学検査結果では, 低栄養, 低カルシウム血症, 腎機能障害を認め, 血中副甲状腺ホルモン: 1174.2 pg/mLであった. 短腸症による吸収不良に関連した腎機能障害による二次性副甲状腺機能亢進症と診断した. 入院後, 二次性副甲状腺機能亢進症に対して, カルシウム・リン投与量を調整し, 中心静脈栄養の投与量の増量を行った. 入院後3カ月で体重は5.71 kgまで増加し, 電解質異常も改善した. 現在, 在宅管理継続中である.

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Record high electron mobilities in high-purity GaN by eliminating C-induced mobility collapse

Shota Kaneki, Taichiro Konno, Takeshi Kimura, Kazutaka Kanegae et autres

Impact of carbon impurities on the electrical properties of lightly doped n-type GaN [electron concentration ∼(1–2)×1015 cm−3 at room temperature] was investigated using temperature-dependent Hall effect measurements. GaN crystals with a threading dislocation density of (1–3)×106 cm−2 were grown by our originally …

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Comprehensive analyses of neurodevelopmental outcomes and quality of life of children with biliary atresia

Yoshinori Satomura, Makiko Tachibana, Kie Yasuda, Yuki Yamano et autres

OBJECTIVES: To holistically evaluate neurodevelopmental outcomes and quality of life (QOL) of Japanese patients with biliary atresia (BA) and to investigate the factors associated with the outcomes. METHODS: This study enrolled patients with BA aged 5-18 years who visited Osaka University Hospital …

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Growth of Nitrides on Nearly Lattice-Matched Substrate ScAlMgO4 and its Application

Takashi Matsuoka, Hirotaka Yahara, Chihiro Hagiwara, Takuya Iwabuchi et autres

Although nitride semiconductors practically used for light-emitting devices and high-frequency and high-power devices, there is no low-cost and large GaN wafer commercially available., the GaN growth on ScAlMgO4substrates instead of GaN substrate, which has been expected to be a nearly lattice-matched substrate …

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Fabrication of AlGaN/GaN heterostructures on halide vapor phase epitaxy AlN/SiC templates for high electron mobility transistor application

Masatomo Sumiya, Osamu Goto, Yuki Takahara, Y. Imanaka et autres

Abstract GaN films were grown on hydride vapor phase epitaxy (HVPE) AlN/SiC templates by metalorganic CVD (MOCVD) without annealing the reactor to eliminate the memory effect. A step-terrace structure and smooth surface were obtained for the GaN film, which had a thickness …

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Utility of a rapid assay for prostaglandin E-major urinary metabolite as a biomarker in pediatric ulcerative colitis

Shin‐ichiro Hagiwara, Naoki Abe, Kenji Hosoi, Tomoko Hara et autres

Prostaglandin E-major urinary metabolite (PGE-MUM) is a urinary biomarker reflecting ulcerative colitis (UC) activity. This prospective observational study aimed to evaluate the usefulness of PGE-MUM via rapid chemiluminescent enzyme immunoassay in detecting endoscopic remission (ER) and histologic remission (HR) in pediatric UC …

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Utility of a rapid assay for Prostaglandin E-major urinary metabolite as a biomarker in pediatric ulcerative colitis

Shin‐ichiro Hagiwara, Naoki Abe, Kenji Hosoi, Tomoko Hara et autres

Abstract Prostaglandin E-major urinary metabolite (PGE-MUM) is a urinary biomarker reflecting ulcerative colitis (UC) activity. This prospective observational study aimed to evaluate the usefulness of PGE-MUM via rapid chemiluminescent enzyme immunoassay in detecting endoscopic remission (ER) and histologic remission (HR) in pediatric …

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Hydride vapor phase epitaxial growth of AlGaN

Hajime Fujikura, Taichiro Konno, Takeshi Kimura

Abstract The growth of AlGaN layers on GaN and AlN templates by hydride vapor phase epitaxy (HVPE) was experimentally investigated in detail. Linear control of the Al solid fraction with respect to that of the gas phase was established under conditions with …

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[Highlight]Marked reduction of electron trap concentrations in HVPE-grown GaN layers

Takeshi Kimura, Taiichiro Konno, Shota Kaneki, Fujikura Hajime

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Substantial and simultaneous reduction of major electron traps and residual carbon in homoepitaxial GaN layers

Takeshi Kimura, Taichiro Konno, Hajime Fujikura

The presence of large amounts of electron traps together with residual carbon, as well as their trade-off relationship, is an obstacle to fabricating next-generation GaN-based power devices using the metal-organic chemical vapor deposition (MOCVD) method. Using the hydride vapor phase epitaxy (HVPE) …

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Case of Muckle–Wells syndrome with erythema dominantly infiltrated by lymphocytes

Saori Kadowaki, Takeshi Kimura, Mayuka Shiraki, Yoko Mizutani et autres

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