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Tae Young Lee, J. M. Lee, Yu‐Whan Oh, Hyun‐Ha Kim et autres
We present a 14nm automotive eMRAM technology with the world-best write energy of 10 pJ/bit and high endurance > lE12 cycles. We have first enhanced eFlash-type eMRAM technology with endurance of lE6 cycles, achieving sub-ppm bit error rates across all failure modes …
kr (code pays fourni par la source)
Adeline Nyamathi, Nikil D. Dutt, Jung‐Ah Lee, Amir Masoud Rahmani et autres
BACKGROUND: An estimated 6.7 million persons are living with dementia in the United States, a number expected to double by 2060. Persons experiencing moderate to severe dementia are 4 to 5 times more likely to fall than those without dementia, due to …
us, pt (code pays fourni par la source)
Tae Young Lee, J. M. Lee, Min Kyu Kim, Junseok Oh et autres
We present the most energy-efficient 16 Mb non-volatile RAM (nvRAM) product with nearly unlimited endurance by using 28-nm embedded MRAM (eMRAM) technology. Among commercially available standalone nvRAM products, this product features the smallest package dimension of 30 mm2at 16 Mb and best-in-class …
kr (code pays fourni par la source)
Kyoobin Lee, D. S. Kim, Jeonghwan Bak, Soomin Ko et autres
We demonstrate embedded STT-MRAM fully integrated onto 28nm CIS logic platform, highlighting the world-best macro density of 13.94 Mb/mm2. The macro provides 55% area saving over 28nm SRAM. The MTJ processes are compatible with standard 3D-stacked CIS integration processes that require sufficient …
kr (code pays fourni par la source)
S. H. Han, J. M. Lee, H. M. Shin, J. H. Lee et autres
We present the world-first demonstration of 28-nm embedded MRAM (eMRAM) for frame buffer memory, highlighting the smallest macro size (0.08 mm2/Mb) reported to date. Compared to SRAM that is commonly used for frame buffer memory, eMRAM provides 47% area saving. For frame …
kr (code pays fourni par la source)
Yongsung Ji, Hurkyong Goo, Ji Hyoun Lim, Tae-Young Jeong et autres
Robust reliability of industrial grade (Tj: -40~125°C) was successfully demonstrated. The reliability items such as HTOL, retention and endurance test showed negligible fail bit count changes with ECC off mode even after accelerated stress conditions for 10yr user life time and come …
kr (code pays fourni par la source)
Kyoobin Lee, Jeonghwan Bak, Yeonji Kim, C. K. Kim et autres
High density 1Gb embedded STT-MRAM in 28nm FDSOI technology was successfully demonstrated. Based on the highly reliable and manufacturable eMRAM technology, high yield over 90% was achieved at the operating temperature from −40°c to 105°c with satisfying read, write function and 10 …
kr (code pays fourni par la source)
Y. J. Song, J. H. Lee, S. H. Han, Hee-Won Shin et autres
We successfully demonstrated the manufacturability of 8Mb STT-MRAM embedded in 28nm FDSOI logic platform by achieving stable functionality and robust package level reliability. Read margin were greatly improved by increasing TMR value and also reducing distribution of cell resistance using advanced MTJ …
kr (code pays fourni par la source)
Uihui Kwon, Takeshi Okagaki, Y. J. Song, Sungyeol Kim et autres
Intelligent design technology co-optimization (iDTCO) methodology for next generation logic architecture pathfinding and its application results are presented in this paper. There are 2 major steps in our iDTCO framework; standard cell (STC)-level iDTCO and block-level iDTCO. STC-level iDTCO, the main focus …
kr, us (code pays fourni par la source)
Y. J. Song, Chun-Yee Chu, Jongwook Jeon, Uihui Kwon et autres
As technology scales down, the impact of BEOL (Back-end of Line) interconnect resistance (R) and capacitance (C) on speed and power of digital circuits have been ever- increasing. Furthermore, in 3-D structured transistors, such as FinFETs and Nano-wire FETs, the parasitic R …
kr (code pays fourni par la source)
Minjin Kang, Taegun Park, Yong-Jin Kwon, Dae-Hwan Ahn et autres
We reported characteristics of 20nm PRAM cell. Optimization of diode integration process and improved implantation technology were used to satisfy the required diode on-current (Ion) with low off-current (Ioff). Confined cell structure and novel bottom electrode (BE) materials were developed to reduce …
kr (code pays fourni par la source)
J.H. Oh, J.H. Park, Yong Lim, H.S. Lim et autres
Fully functional 512Mb PRAM with 0.047μm2(5.8F2) cell size was successfully fabricated using 90nm diode technology in which we developed novel process schemes such as vertical diode as cell switch, self-aligned bottom electrode contact scheme, and line-type Ge2Sb2Te5. The 512Mb PRAM showed excellent …
kr (code pays fourni par la source)
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