J. M. Lee

Innovative EMI-Shielding plastics – Functional integration enabling weight and cost reduction in the example of a DC-DC converter application

J. M. Lee

World-Most Energy-Efficient 14nm Automotive eMRAM Technology for High-Endurance Applications

Tae Young Lee, J. M. Lee, Yu‐Whan Oh, Hyun‐Ha Kim et autres

We present a 14nm automotive eMRAM technology with the world-best write energy of 10 pJ/bit and high endurance > lE12 cycles. We have first enhanced eFlash-type eMRAM technology with endurance of lE6 cycles, achieving sub-ppm bit error rates across all failure modes …

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A Robust High On-Duty Buck Converter Achieving a Peak Effective On-Duty of 0.976 With EMI Suppression

Young-Ju Oh, Chan-Ho Lee, Sang-Yun Nam, Jun-Seok Oh et autres

This article proposes a control method for buck converter used in a highly integrated system to ensure robust operation even when the converter operates with significantly high on-duty (DON). According to the DON, the proposed controller automatically changes the operation mode between …

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Comprehensive study on prediction of endurance properties from breakdown voltage in high-reliable STT-MRAM

H. Sato, H. M. Shin, Hoeryong Jung, S. W. Lee et autres

We have comprehensively studied prediction of endurance properties STT-MRAM based on breakdown voltage. First, by using 8Mb test MRAM chip, we clarified that a scale parameter dominating the endurance properties can be well predicted from breakdown voltage (BV) by taking into account …

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Highly reliable STT-MRAM adopting advanced MTJs with controlled domain wall pinning

Jae-Hyun Park, Jin Hae Kim, J. M. Kim, Choul‐Young Kim et autres

We demonstrate highly reliable STT-MRAM whose array-level write error has been eliminated by lowering the density of domain wall pinning sites in the MTJs. The core part of investigation includes the identification and quantification of domain wall pinning sites, characterization and modeling …

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World-most energy-efficient MRAM technology for non-volatile RAM applications

Tae Young Lee, J. M. Lee, Min Kyu Kim, Junseok Oh et autres

We present the most energy-efficient 16 Mb non-volatile RAM (nvRAM) product with nearly unlimited endurance by using 28-nm embedded MRAM (eMRAM) technology. Among commercially available standalone nvRAM products, this product features the smallest package dimension of 30 mm2at 16 Mb and best-in-class …

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28nm CIS-Compatible Embedded STT-MRAM for Frame Buffer Memory

Kyoobin Lee, D. S. Kim, J. Bąk, Soomin Ko et autres

We demonstrate embedded STT-MRAM fully integrated onto 28nm CIS logic platform, highlighting the world-best macro density of 13.94 Mb/mm2. The macro provides 55% area saving over 28nm SRAM. The MTJ processes are compatible with standard 3D-stacked CIS integration processes that require sufficient …

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12.5 Mb/mm 2 embedded MRAM for high density non-volatile RAM applications

Kyung‐Soo Suh, J. H. Lee, H. M. Shin, J. M. Lee et autres

We demonstrate 28-nm embedded MRAM (eMRAM) macro for non-volatile RAM (nvRAM) applications, featuring macro density of 12.5 Mb/mm2, write speed 1E9 cycles. This is the smallest 28-nm nvRAM-type eMRAM macro reported to date and provides ~2× area saving compared to SRAM while …

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28-nm 0.08 mm 2 /Mb Embedded MRAM for Frame Buffer Memory

S. H. Han, J. M. Lee, H. M. Shin, J. H. Lee et autres

We present the world-first demonstration of 28-nm embedded MRAM (eMRAM) for frame buffer memory, highlighting the smallest macro size (0.08 mm2/Mb) reported to date. Compared to SRAM that is commonly used for frame buffer memory, eMRAM provides 47% area saving. For frame …

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Enhancement of a cyclic endurance of phase change memory by application of a high-density C15(Ge21Sb36Te43) film

J.H. Park, Seung Won Kim, J. H. Kim, Dae‐Hong Ko et autres

The lower cyclic endurance of Phase Change Memory (PCM) devices limits the spread of its applications for reliable memory. The findings reported here show that micro-voids and excess vacancies that are produced during the deposition process and the subsequent growth in sputtered …

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Improvement of reliability and speed of phase change memory devices with N7.9(Ge46.9Bi7.2Te45.9) films

J.H. Park, S.-W. Kim, J. H. Kim, Dae‐Hong Ko et autres

In this study, we propose a nitrogen-incorporated GeBiTe ternary phase of N7.9(Ge46.9Bi7.2Te45.9) as a phase change material for reliable PCM (Phase Change Memory) with high speed operation. We found that the N7.9(Ge46.9Bi7.2Te45.9) film shows the resistance value of 40 kΩ after annealing …

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Reduction of RESET current in phase change memory devices by carbon doping in GeSbTe films

J.H. Park, S.-W. Kim, J. H. Kim, Zhe Wu et autres

Phase Change Memory (PCM) has been proposed for use as a substitute for flash memory to satisfy the huge demands for high performance and reliability that promise to come in the next generation. In spite of its high scalability, reliability, and simple …

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