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Profil bibliographique

Sangwoo Kim

Informations fournies par OpenAlex. Research Africa ne déduit ni nationalité, ni poste, ni coordonnées personnelles.

63Publications signalées
1409Citations signalées
1Affiliations récentes

Les institutions déclarées

Les domaines associés

Semiconductor materials and devicesFerroelectric and Negative Capacitance DevicesThin-Film Transistor TechnologiesZnO doping and propertiesAdvanced Memory and Neural Computing

Les publications récentes

2026 article OpenAlex

Low-Temperature Monolithic Integration of a Polycrystalline Silicon Ferroelectric-Gate Field-Effect Transistor with Microwave-Annealed HfZrO x for Energy-Efficient Neuromorphic Computing

Sangwoo Kim, Been Kwak, Hyun-Min Kim, Sangeun Kwak et autres

Abstract Owing to the physical and economic limitations of conventional scaling, monolithic three-dimensional (M3D) integration offers a promising route to enhance device density and performance. Integrating ferroelectric-gate field-effect transistors (FeFETs) into M3D architectures is challenging because dopant activation and ferroelectric crystallization usually …

kr (code pays fourni par la source)

0 citations ACS Materials Letters
Accès ouvert 2025 article OpenAlex

Ultra-Low Core Loss and High-Frequency Permeability Stability in Hot-Press Sintered FeSi Soft Magnetic Composites by Fe2O3 Nanoparticles Air Gap Filling

Muhammad Arif, Dong-Hun Han, Seunghun Cha, Changsun Pak et autres

Soft magnetic materials are crucial in motors, generators, transformers, and many electronic devices. We synthesized the FeSi soft magnetic composites (SMCs) with different doping contents of Fe2O3 nanopowders as fillers via the hot-press sintering technique. This work explores the incorporation of high-resistivity …

kr (code pays fourni par la source)

11 citations Materials
Accès ouvert 2025 conference-paper OpenAlex

GNN-Transformer Task Planning Enhanced with Semantic-Driven Data Augmentation

Seongwan Byeon, Sangwoo Kim, Yoonseon Oh

Natural language is the most intuitive means for humans to interact with robots, making task planning based on natural language commands a longstanding area of research. Large language models (LLMs) have significantly improved task planning by enhancing understanding of language and common …

kr (code pays fourni par la source)

1 citation Proceedings of the AAAI Conference on Artificial Intelligence
Accès ouvert 2025 article OpenAlex

Low‐Frequency Noise Spectroscopy for Navigating Geometrically Varying Strain Effects in HfO 2 Ferroelectric FETs

Ryun‐Han Koo, Wonjun Shin, Sangwoo Kim, Jangsaeng Kim et autres

Strain engineering has been widely employed to control and enhance the ferroelectric properties of hafnium oxide (HfO₂)-based thin films. While previous studies focused on the influence of the strain in simple metal-ferroelectric-metal structures, the integration of strain-induced ferroelectricity into field-effect transistors (FETs) …

kr, us (code pays fourni par la source)

21 citations Advanced Science
Accès ouvert 2025 article OpenAlex

A New Back‐End‐Of‐Line Ferroelectric Field‐Effect Transistor Platform via Laser Processing (Small 15/2025)

Sangwoo Kim, Wonjun Shin, Ryun‐Han Koo, Jangsaeng Kim et autres

Field-Effect Transistors In article number 2406376, Wonjun Shin, Suraj S. Cheema, Daewoong Kwon, and co-workers demonstrates a breakthrough in ferroelectric field-effect transistor (FeFET) technology by integrating polycrystalline silicon channels via locally-confined laser thermal processing and hafnia-based ferroelectrics using low-temperature atomic layer deposition. …

kr, us (code pays fourni par la source)

0 citations Small
2024 conference-abstract OpenAlex

Fabrication of CuO NP for NO2 Gas Sensing

Sangwoo Kim, Myung Sik Choi

NO2 is a very dangerous gas that is mainly emitted from fossil fuels and is a major cause of air pollution. It has environmental problems cause by acid rain and has a bad effect on human health. In this study, mesoporous CuOx …

0 citations ECS Meeting Abstracts
Accès ouvert 2024 article OpenAlex

A New Back‐End‐Of‐Line Ferroelectric Field‐Effect Transistor Platform via Laser Processing

Sangwoo Kim, Wonjun Shin, Ryun‐Han Koo, Jangsaeng Kim et autres

The discovery of ferroelectricity in hafnia-based materials has revitalized interest in realizing ferroelectric field-effect transistors (FeFETs) due to its compatibility with modern microelectronics. Furthermore, low-temperature processing by atomic layer deposition offers promise for realizing monolithic three-dimensional (M3D) integration toward energy- and area-efficient …

kr, us (code pays fourni par la source)

23 citations Small
2024 article OpenAlex

Effects of Deposition Power and Thermal Treatment on Ferroelectric Properties of Sputtered Hf₀.₅Zr₀.₅O₂

Changhyeon Han, Ki Ryun Kwon, Jiyong Yim, Jeonghan Kim et autres

In this letter, we investigated the ferroelectric characteristics of Hf$_\text{0.5}$Zr$_\text{0.5}$O$_\text{2}$(HZO) deposited by radio frequency (RF) sputtering at various deposition powers and the impact of additional long-term furnace annealing (FA) after ferroelectric formation annealing. Significant improvements in the ferroelectric properties were clearly observed …

kr (code pays fourni par la source)

12 citations IEEE Transactions on Electron Devices

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