2026
article
OpenAlex
Sangwoo Kim, Been Kwak, Hyun-Min Kim, Sangeun Kwak et autres
Abstract Owing to the physical and economic limitations of conventional scaling, monolithic three-dimensional (M3D) integration offers a promising route to enhance device density and performance. Integrating ferroelectric-gate field-effect transistors (FeFETs) into M3D architectures is challenging because dopant activation and ferroelectric crystallization usually …
kr
(code pays fourni par la source)
2025
article
OpenAlex
Byeol-Eun Jeon, Chan-Seong Kwon, Jieun Lee, Su-Ji Lee et autres
kr, mx
(code pays fourni par la source)
2025
article
OpenAlex
Sangwoo Kim, Jaeho Lee, Jooheon Kim
kr, us
(code pays fourni par la source)
Accès ouvert
2025
article
OpenAlex
Muhammad Arif, Dong-Hun Han, Seunghun Cha, Changsun Pak et autres
Soft magnetic materials are crucial in motors, generators, transformers, and many electronic devices. We synthesized the FeSi soft magnetic composites (SMCs) with different doping contents of Fe2O3 nanopowders as fillers via the hot-press sintering technique. This work explores the incorporation of high-resistivity …
kr
(code pays fourni par la source)
Accès ouvert
2025
conference-paper
OpenAlex
Seongwan Byeon, Sangwoo Kim, Yoonseon Oh
Natural language is the most intuitive means for humans to interact with robots, making task planning based on natural language commands a longstanding area of research. Large language models (LLMs) have significantly improved task planning by enhancing understanding of language and common …
kr
(code pays fourni par la source)
Accès ouvert
2025
article
OpenAlex
Ryun‐Han Koo, Wonjun Shin, Sangwoo Kim, Jangsaeng Kim et autres
Strain engineering has been widely employed to control and enhance the ferroelectric properties of hafnium oxide (HfO₂)-based thin films. While previous studies focused on the influence of the strain in simple metal-ferroelectric-metal structures, the integration of strain-induced ferroelectricity into field-effect transistors (FETs) …
kr, us
(code pays fourni par la source)
Accès ouvert
2025
article
OpenAlex
Sangwoo Kim, Wonjun Shin, Ryun‐Han Koo, Jangsaeng Kim et autres
Field-Effect Transistors In article number 2406376, Wonjun Shin, Suraj S. Cheema, Daewoong Kwon, and co-workers demonstrates a breakthrough in ferroelectric field-effect transistor (FeFET) technology by integrating polycrystalline silicon channels via locally-confined laser thermal processing and hafnia-based ferroelectrics using low-temperature atomic layer deposition. …
kr, us
(code pays fourni par la source)
Accès ouvert
2025
preprint
OpenAlex
Sangwoo Kim, Wondu Lee, Jaeho Lee, Jooheon Kim
kr
(code pays fourni par la source)
2024
conference-abstract
OpenAlex
Sangwoo Kim, Myung Sik Choi
NO2 is a very dangerous gas that is mainly emitted from fossil fuels and is a major cause of air pollution. It has environmental problems cause by acid rain and has a bad effect on human health. In this study, mesoporous CuOx …
Accès ouvert
2024
article
OpenAlex
Sangwoo Kim, Wonjun Shin, Ryun‐Han Koo, Jangsaeng Kim et autres
The discovery of ferroelectricity in hafnia-based materials has revitalized interest in realizing ferroelectric field-effect transistors (FeFETs) due to its compatibility with modern microelectronics. Furthermore, low-temperature processing by atomic layer deposition offers promise for realizing monolithic three-dimensional (M3D) integration toward energy- and area-efficient …
kr, us
(code pays fourni par la source)
2024
article
OpenAlex
G. R. Lee, Ji Yeon Baek, Jae Yun Lim, Sangwoo Kim et autres
kr
(code pays fourni par la source)
2024
article
OpenAlex
Changhyeon Han, Ki Ryun Kwon, Jiyong Yim, Jeonghan Kim et autres
In this letter, we investigated the ferroelectric characteristics of Hf$_\text{0.5}$Zr$_\text{0.5}$O$_\text{2}$(HZO) deposited by radio frequency (RF) sputtering at various deposition powers and the impact of additional long-term furnace annealing (FA) after ferroelectric formation annealing. Significant improvements in the ferroelectric properties were clearly observed …
kr
(code pays fourni par la source)