O. Renault

CH4/H2/Ar etching study of N-polar GaN for micro-LED applications

Sandra Kozuch, Simon Ruel, David Vaufrey, O. Renault

Inductively coupled plasma (ICP) etching of N-polar n-doped gallium nitride (GaN) with a CH4/H2/Ar chemistry was investigated as a function of CH4 ratio in the gas mixture, DC bias voltage, ICP source power, pressure, and total gas flow. Two etching modes are …

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Electron trapping/detrapping at oxygen vacancies and imprint evolution in La-doped Hf0.5Zr0.5O2 ferroelectric capacitors probed by hard x-ray photoelectron spectroscopy

Wassim Hamouda, Yoshiyuki Yamashita, Shigenori Ueda, Sylvia Matzen et autres

We evaluate the correlation between polarization-dependent oxygen vacancy profile and imprint in technologically relevant TiN/La-doped Hf0.5Zr0.5O2/TiN ferroelectric capacitors using hard x-ray photoelectron spectroscopy (HAXPES) with in situ biasing. The concentration of double positively charged oxygen vacancies (VO..) was inferred from the intensity …

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Monolayer Control of Spin-Charge Conversion in van der Waals Heterostructures

Khasan Abdukayumov, Oliver Paull, Martin Mičica, Fatima Ibrahim et autres

The diversity of 2D materials and their van der Waals (vdW) stacking presents fertile ground for engineering novel multifunctional materials and quantum states of matter. This permits unique opportunities to tailor the electronic properties of vdW heterostructures by the insertion of only …

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HAXPES spectra of bulk WS2 with Cr Kα excitation

A. Boyer, O. Renault, Nicolas Gauthier

Monochromatic Cr Kα radiation (5414.8 eV) was used to acquire high-energy photoelectron spectroscopy (HAXPES) data on pure WS2. The reported spectra include a survey scan and high-resolution W 3s, W 3p1/2, W 3p3/2, W 3d3/2, W 2d5/2, W 4s, W 4p1/2, W …

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HAXPES reference spectra of MoS2 with Cr Kα excitation

A. Boyer, Nicolas Gauthier, O. Renault

Monochromatic Cr Kα radiation (5414.8 eV) was used to acquire high-energy photoelectron spectroscopy (HAXPES) data on pure bulk MoS2. The reported spectra include a survey scan, high-resolution spectra of Mo 2s, Mo 2p, Mo 3s, Mo 3p, Mo 3d, Mo 4s, Mo …

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Intensity-energy response function of Al/Cr-K α x-ray photoemission instruments: An inter-laboratory study

David Alamarguy, Damien Aureau, Thierry Conard, Nicolas Gauthier et autres

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New challenges associated with hard X‐ray photoelectron spectroscopy (report on the 2023 ASTM E42‐ASSD AVS workshop)

Alberto Herrera‐Gómez, David J. H. Cant, Thierry Conard, O. Renault et autres

In contrast to traditional X‐ray photoelectron spectroscopy (XPS), hard X‐ray photoelectron spectroscopy (HAXPES) can provide information from deeper within a sample while maintaining chemical resolution. However, working with higher energy X‐rays introduces a series of new or different issues ranging from energy …

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Surface science insight note: Optimizing XPS instrument performance for quantification of spectra

Vincent Fernandez, O. Renault, Neal Fairley, Jonas Baltrušaitis

X‐ray photoelectron spectroscopy (XPS) provides quantitative information from photoemission peaks and shapes observed within the background due to the inelastic scattering of photoelectrons. To quantify the signal, both photoemission peaks and background in spectra must be adjusted for instrumental transmission variations that …

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HAXPES reference spectra of bulk Mo and MoSe2 with Cr Kα excitation

Pierre-Marie Deleuze, Nicolas Gauthier, Kateryna Artyushkova, E. Martínez et autres

Monochromatic Cr Kα radiation (5414.8 eV) was used to acquire high-energy photoelectron spectroscopy (HAXPES) data on pure Mo and bulk MoSe2 compound with special attention paid to binding energy scale correction and quantification. The reported spectra include a survey scan and high-resolution …

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Chemical Analysis of Non-Stoichiometric Molybdenum Oxide by Photoemission: A Consistent Use of Both Mo3d and Mo2p3/2 Core-Levels

Roman Charvier, M. Juhel, Louis-David Mohgouk Zouknak, O. Renault et autres

Time‐of‐flight secondary ion mass spectrometry and X‐ray photoelectron spectroscopy protocol for the analysis of organic multilayers

Claire Guyot, Jean‐Paul Barnes, O. Renault, Tony Maindron

With the development in the early 2000s of new cluster ion sputtering sources, a reliable analysis of organic multilayers and interfaces has become possible. Nowadays, time‐of‐flight secondary ion mass spectrometry (ToF‐SIMS) and X‐ray photoelectron spectroscopy (XPS) depth profiling are routinely used to …

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HAXPES reference spectra of bulk W and WSe2 with Cr Kα excitation

Pierre-Marie Deleuze, Nicolas Gauthier, Kateryna Artyushkova, E. Martínez et autres

Monochromatic Cr Kα radiation (5414.8 eV) was used to acquire high-energy photoelectron spectroscopy data on pure W and bulk WSe2 compound. The reported spectra include a survey scan and high-resolution W 3p1/2, W 3p3/2, W 3d3/2, W 3d5/2, W 4s, W 4p1/2, …

fr (code pays fourni par la source)