June-O Song

Revealing the dependency of efficiency on the lateral carrier diffusion length in InGaN/GaN blue and green micro-LEDs

Abu Bashar Mohammad Hamidul Islam, Tae Kyoung Kim, Yu‐Jung Cha, J. W. Bae et autres

The effects of sidewall defects and the lateral carrier diffusion length on external quantum efficiency (EQE) are consistently investigated in InGaN/GaN-based blue and green micro-LEDs. Both blue and green micro-LEDs have the same mesa sizes: 20×20 and 60×60 μm2. The blue micro-LEDs …

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Enhanced size-dependent efficiency of InGaN/AlGaN near-ultraviolet micro-LEDs

Abu Bashar Mohammad Hamidul Islam, Tae Kyoung Kim, Yu‐Jung Cha, Joosun Yun et autres

This study presents an approach for enhancing the external quantum efficiency (EQE) of multiple-quantum-well InGaN/AlGaN near-ultraviolet (NUV) micro-light-emitting diodes (micro-LEDs) without changing the epitaxial layer. Unlike the size-dependent EQE reduction observed in blue, green, and red micro-LEDs, the EQE of NUV micro-LEDs …

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Light output performance of red AlGaInP-based light emitting diodes with different chip geometries and structures

Jeong-Tak Oh, Sang-Youl Lee, Yong-Tae Moon, Ji Hyung Moon et autres

than the LED with 20 pairs of MQWs. These results show that the optimization of the number of QWs is needed to obtain maximum EQE of micro-LEDs.

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Effect of Phosphor Layer Size on the Optical and Thermal Properties of Chip Scale Packaged Light-Emitting Diodes

Gyu Hyeong Bak, Sun Woo Oh, Hyun Ho Sung, Won Jung Kim et autres

Light-emitting diodes (LEDs) have been widely applied for backlight unit for displays, general lighting, and automotive illumination because they have a high light efficiency and long life time, and are environmentally friendly. These diverse applications require smaller and slim LED chip scale …

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Thin-Film-Flip-Chip LEDs Grown on Si Substrate Using Wafer-Level Chip-Scale Package

Keon Hwa Lee, Mojtaba Asadirad, Shahab Shervin, Seung Kyu Oh et autres

Demonstrated are visible GaN-based light-emitting diodes (LEDs) on economical large-area Si substrates using an advanced device and packaging architecture to improve optical output power, while reducing manufacturing costs. The process employs thin-film-flip-chip devices and wafer-level chip-scale packages and uses through-Si-via substrate and …

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Light interaction in sapphire/MgF2/Al triple-layer omnidirectional reflectors in AlGaN-based near ultraviolet light-emitting diodes

Keon Hwa Lee, Yong-Tae Moon, June-O Song, Joon Seop Kwak

This study examined systematically the mechanism of light interaction in the sapphire/MgF2/Al triple-layer omnidirectional reflectors (ODR) and its effects on the light output power in near ultraviolet light emitting diodes (NUV-LEDs) with the ODR. The light output power of NUV-LEDs with the …

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Visible Light-Emitting Diodes With Thin-Film-Flip- Chip-Based Wafer-Level Chip-Scale Package Technology Using Anisotropic Conductive Film Bonding

Keon Hwa Lee, Seung Hwan Kim, Woo-Sik Lim, June-O Song et autres

Demonstrated is advanced device and packaging architecture of visible GaN-based light-emitting diodes (LEDs) combining thin-film flip-chip devices and wafer-level chip-scale package with through-silicon-via (TSV) and wafer-to-wafer alignment bonding. In addition, a new interconnect technique for LEDs is introduced using an anisotropic conductive …

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Low resistance and thermally stable Ti/Al-based Ohmic contacts to N-face n-GaN for vertical light-emitting diodes by using Ti(Ga) solid solution and TiN layers

Joon-Woo Jeon, Woong-Sun Yum, Tae‐Yeon Seong, Sang Youl Lee et autres

The authors report on the formation of highly reliable Ti/Al-based ohmic contacts to N-face n-GaN for high-performance vertical light-emitting diodes by using Ti(Ga) solid solution and TiN layers. The Ti(Ga) solid solution layer is used to minimize the outdiffusion of Ga atoms …

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Highly Reliable Ohmic Contacts to N-Polar n-Type GaN for High-Power Vertical Light-Emitting Diodes

Joon-Woo Jeon, Sang Youl Lee, June-O Song, Tae‐Yeon Seong

We report on the formation of highly reliable Ti/Al-based Ohmic contacts to N-polar n-GaN for vertical light-emitting diodes via laser-annealing. All as-deposited samples are Ohmic with specific contact resistances of 1.1 - 4.3 × 10-4Ω cm2. After annealing at 250°C, unlike the …

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Enhancement of light output power of GaN-based vertical light emitting diodes by optimizing n-GaN thickness

Hwan Hee Jeong, Sang Youl Lee, Kwang Ki Choi, June-O Song et autres

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Improved Electrostatic Discharge Protection in GaN-Based Vertical Light-Emitting Diodes by an Internal Diode

Hwan Hee Jeong, Sang Youl Lee, Jung-Hyeok Bae, Kwang Ki Choi et autres

We first fabricated GaN-based vertical light-emitting diodes (LEDs) with electrostatic discharge (ESD) protection internal diode. Despite the reduced emitting area due to the internal diode, the LEDs with the internal diode give a forward voltage of 3.42 V at 350 mA similar …

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Improved Light Output Power of GaN-based LEDs by Enhancing Current Injection and Spreading - Invited

Joon-Woo Jeon, June-O Song, Hyunsoo Kim, Tae‐Yeon Seong

Abstract not Available.

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