D. Caudevilla

Effect of soft annealing on optoelectronic performances of Ti-hyperdoped Si photodiodes

Rafel Benítez-Fernández, K. M. A. Rahman, G. Godoy-Pérez, D. Caudevilla et autres

We investigate the impact of soft furnace annealing (250–450 °C) on the optoelectronic performance of Ti-hyperdoped Si photodiodes. The annealing step, introduced between Ti ion implantation and nanosecond pulsed laser melting (ns-PLM), was designed to improve the crystalline quality of the seed …

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Supplementary Material

Rafael Benítez Fernández, KM Ashikur Rahman, Guillermo Godoy-Pérez, D. Caudevilla et autres

Additional data and information about THz measurementes

Effect of soft annealing on optoelectronic performances of Ti-hyperdoped Si photodiodes.

E. García-Hemme, Javier Olea, Rafael Benítez Fernández, David Pastor et autres

We investigate the impact of soft furnace annealing (250-450 {degree sign}C) on the optoelectronic performance of Ti-hyperdoped Si photodiodes. The annealing step, introduced between Ti ion implantation and nanosecond pulsed laser melting (ns-PLM), was designed to improve the crystalline quality of the …

Supplementary Material

Rafael Benítez Fernández, KM Ashikur Rahman, Guillermo Godoy-Pérez, D. Caudevilla et autres

Additional data and information about THz measurementes

Transparent conductive aluminum-zinc oxide layers deposited by high pressure sputtering

S. Duarte-Cano, L. Torrecilla, F. Pérez-Zenteno, Rafel Benítez-Fernández et autres

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Proton irradiation effects on silicon heterojunction solar cells with MoOx selective contacts

S. Duarte-Cano, F. Pérez-Zenteno, D. Caudevilla, Javier Olea et autres

In this study, we investigate the effects of proton irradiation on silicon-based heterojunction and molybdenum oxide (MoO x ) selective contact solar cells. The main idea is to study their potential application in small satellites for measurement and monitoring. The irradiation dose …

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Tuning spike-like morphologies in Silicon by sustainable fs-laser processing in air for enhanced light absorption

Gonzalo Gomez-Muñoz, Rafael Benítez‐Fernández, Guillermo Godoy‐Pérez, Fátima Cabello et autres

• Size- and period-scalable spike-like structures have been achieved. • Non-hyperdoped black silicon is fabricated in ambient air by fs-laser processing. • An absorptance > 94 % is achieved just by the texturing up to 1100 nm. • Non-zero absorptance by light …

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High-pressure sputtering deposition and in situ plasma oxidation of TiOx thin films as electron selective contact for photovoltaic applications

F. Pérez-Zenteno, E. García-Hemme, Ignacio Torres, Rocío Barrio et autres

In this article, we show the structural, optical, and electrical characterization of TiO x deposited by the unconventional technique of High-Pressure Sputtering (HPS). This technique has the potential to reduce the plasma-induced damage of the samples. To fabricate the TiO x, a …

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Optoelectronic properties of GaP:Ti photovoltaic devices

Javier Olea, J. Gonzalo, Jan Siegel, Alejandro F. Braña et autres

Supersaturated GaP is of interest for the photovoltaic field since optical transitions at energies below the bandgap (2.26 eV) could enhance the overall device efficiency up to theoretically 60%. We have previously demonstrated that Ti supersaturated GaP can be obtained by means …

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Native Oxide Layer Role during Cryogenic‐Temperature Ion Implantations in Germanium

D. Caudevilla, F. Pérez-Zenteno, S. Duarte-Cano, S. Algaidy et autres

Herein, the structural properties and chemical composition of Ge samples implanted with tellurium at cryogenic temperatures are analyzed, focusing on the role of the native oxide. For germanium, cryogenic‐temperature implantation is a requirement to achieve hyperdoped impurity concentrations while simultaneously preventing surface …

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Optical, Electrical, and Optoelectronic Characterization of Ti‐Supersaturated Gallium Arsenide

S. Algaidy, D. Caudevilla, Guillermo Godoy‐Pérez, Rafael Benítez‐Fernández et autres

Herein, a detailed investigation on the properties of supersaturated gallium arsenide (GaAs) using Ti+ implantation followed by nanosecond pulsed laser melting (PLM) is presented. The supersaturated samples are analyzed by means of electrical, optical, and optoelectronic characterization. The sheet resistance results obtained …

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High-Pressure Sputtering Deposition and in Situ Plasma Oxidation of Tiox Thin Films as Electron Selective Contact for Photovoltaic Applications

F. Pérez-Zenteno, E. García-Hemme, Ignacio Torres, Rocío Barrio et autres

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