E. García-Hemme

Breakthrough in Short-Wavelength Infrared Quantum Efficiency in Te-Hyperdoped Silicon Photodetectors via Light-Trapping Strategies

E. García-Hemme, Rafael Benítez‐Fernández, S. Duarte-Cano, F. Pérez-Zenteno et autres

We report a Si-CMOS-compatible photodiode for room temperature short-wavelength infrared detection. The architecture integrates Te-hyperdoped silicon with light-trapping structures to achieve a breakthrough in sub-band-gap efficiency. Specifically, by combining surface texturing and a back reflector, we boost absorptance to ≈85%, enabling the …

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Effect of soft annealing on optoelectronic performances of Ti-hyperdoped Si photodiodes

Rafel Benítez-Fernández, K. M. A. Rahman, G. Godoy-Pérez, D. Caudevilla et autres

We investigate the impact of soft furnace annealing (250–450 °C) on the optoelectronic performance of Ti-hyperdoped Si photodiodes. The annealing step, introduced between Ti ion implantation and nanosecond pulsed laser melting (ns-PLM), was designed to improve the crystalline quality of the seed …

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Supplementary Material

Rafael Benítez Fernández, KM Ashikur Rahman, Guillermo Godoy-Pérez, D. Caudevilla et autres

Additional data and information about THz measurementes

Effect of soft annealing on optoelectronic performances of Ti-hyperdoped Si photodiodes.

E. García-Hemme, Javier Olea, Rafael Benítez Fernández, David Pastor et autres

We investigate the impact of soft furnace annealing (250-450 {degree sign}C) on the optoelectronic performance of Ti-hyperdoped Si photodiodes. The annealing step, introduced between Ti ion implantation and nanosecond pulsed laser melting (ns-PLM), was designed to improve the crystalline quality of the …

Supplementary Material

Rafael Benítez Fernández, KM Ashikur Rahman, Guillermo Godoy-Pérez, D. Caudevilla et autres

Additional data and information about THz measurementes

Experiment and simulation in silicon PN-junction photodetectors: Insights into electrical and optical transport

M. Khaouani, Andrea Sessa, Sebastiano De Stefano, Hichem Rouigueb et autres

Silicon PN junctions remain central to optoelectronic technologies due to their maturity and CMOS compatibility. We report the fabrication and comprehensive optoelectronic characterization of a silicon PN-junction photodiode demonstrating stable operation over a wide temperature range. The device exhibits excellent diode behavior, …

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High-quality fs-laser structured Si in air for optoelectronic applications

Rafael Benítez‐Fernández, Gonzalo Gomez-Muñoz, E. García-Hemme, Nuria Roca-Giménez et autres

• Rapid thermal annealing removes femtosecond-laser–induced extended crystalline defects in black silicon. • Annealing drives oxygen toward the surface, forming an oxide-rich layer revealed by STEM and ToF-SIMS. • Buffered oxide etching selectively removes the oxygen-rich decorations without altering the microstructure. • …

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Transparent conductive aluminum-zinc oxide layers deposited by high pressure sputtering

S. Duarte-Cano, L. Torrecilla, F. Pérez-Zenteno, Rafel Benítez-Fernández et autres

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Characterization of Cr implanted GaAs processed with ArF and Nd-YAG laser melting

S. Algaidy, S. Duarte-Cano, F. Pérez-Zenteno, R. García-Hernansanz et autres

Abstract We present a detailed investigation on the properties of supersaturated GaAs using Cr implantation followed by nanosecond pulsed laser melting (PLM). A comparison between two different lasers was carried out (ArF and Nd:YAG). We have analyzed supersaturated samples by means of …

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Proton irradiation effects on silicon heterojunction solar cells with MoOx selective contacts

S. Duarte-Cano, F. Pérez-Zenteno, D. Caudevilla, Javier Olea et autres

In this study, we investigate the effects of proton irradiation on silicon-based heterojunction and molybdenum oxide (MoO x ) selective contact solar cells. The main idea is to study their potential application in small satellites for measurement and monitoring. The irradiation dose …

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High-quality fs-laser structured Si in air for optoelectronic applications

Rafel Benítez-Fernández, Gonzalo Gomez-Muñoz, E. García-Hemme, Nuria Roca-Giménez et autres

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High-pressure sputtering deposition and in situ plasma oxidation of TiOx thin films as electron selective contact for photovoltaic applications

F. Pérez-Zenteno, E. García-Hemme, Ignacio Torres, Rocío Barrio et autres

In this article, we show the structural, optical, and electrical characterization of TiO x deposited by the unconventional technique of High-Pressure Sputtering (HPS). This technique has the potential to reduce the plasma-induced damage of the samples. To fabricate the TiO x, a …

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