Shao-Peng Su

Multifunctional Optoelectronic Memristor Based on MEH-PPV/C60 Heterojunction for Artificial Synapses and Bionic Visual System With Fear Sensing

Shao-Peng Su, Jia Jun Zhou, Yexiong Huang, Wen Li et autres

Photoelectric memristors, with the advantages of low-power consumption, high scalability and high parallelism, have provided a way for broadening the application of memristors. Photoelectric memristors based on heterojunction structures have gained high-performance in simulating biological synaptic plasticity and visual synaptic bionics. However, …

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Investigation of light-induced degradation on P-type multi-crystalline silicon PERC cells

Kuo-Yi Yen, Shao-Peng Su, Sean H. T. Chen

Multi-crystalline silicon Passivated Emitter and Rear .Cell (mc-PERC) is a promising combination of p-type low cost and nigh efficiency solar cells. Recently, the Light-Induced Degradation (LED) phenomena on mc-PERC cells have been highly discussed. In order to realize the mechanism, the LID …

Investigation of cooling effect on alloying Al-p+ emitter for n-type silicon solar cell

Tseng-Jung Chang, Sean H. T. Chen, Chia‐Yu Shen, Shao-Peng Su

In this study, we demonstrate a concept for optimizing the alloying process for Al-p+ emitter formation with a commercially available aluminum paste, screen-printing technology and belt-conveyor furnace. A more uniform and conformal Al-p+ emitter is obtained at the sample with slow cooling …

The Effect of Alloying Conditions on the Formation of Al-p+ Emitter for n-Type Silicon Solar Cells

Tseng-Jung Chang, Sean H. T. Chen, Chia‐Yu Shen, Shao-Peng Su et autres

The effect of alloying conditions on the formation of Al-p+ emitter is investigated by realizing the alloying processes in terms of correlations between emitter and eutectic layer thickness. The emitter thickness and homogeneity are discussed by implementing various combinations of ramping and …

The investigation of implanted boron emitter for n-type bifacial silicon solar cells

Shao-Peng Su, Yu-Hung Huang, Chih-Ming Kang, Sean H. T. Chen

N-type silicon wafers have been more promising for developing high efficiency solar cells, and the novel technique of ion implantation has been applied for the formation of excellent quality emitters. The n-type bifacial cells have demonstrated the advantages of not only transparent …

Investigation of N-Type Screen-Printed Bifacial Solar Cells with Diffused Boron Emitter and Implanted Phosphorous Bsf

Chang-Seog Kang, Shao-Peng Su, Shiao Chen, Liwei Cheng

In this work, we present the approach of n-type screen-printed bifacial cells with boron emitter and phosphorous BSF (Back Surface Field) which are fabricated by diffusion furnace and ion-implantation techniques, respectively. The investigations show that the comparably low Joe (70 fA/cm2) on …

N-type al-alloyed rear junction silicon solar cells with implanted front surface field

Shao-Peng Su, Naratip Chantarat, Yu-Hung Huang, Chih-Ming Kang et autres

N-type wafer, which has high minority carrier lifetime and high tolerance of metal impurities, can provide the advantage such as no LID (Light Induced Degradation) for developing high efficiency solar cells. The ion implantation technology becomes an emerging method to be applied …

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19.2% Efficiency n-Type Al-Alloyed Rear Junction Silicon Solar Cells with Implanted Front Surface Field

Shao-Peng Su, Naratip Chantarat, Yuan Huang, Chih-Ming Kang et autres

In this work, the performance improvements of n-type alloyed rear junction Si solar cells have been demonstrated. Experimentally, the n+/n/p+ rear emitter cells were fabricated by using 1-5 ohm-cm 239 cm2 n-type CZ wafers. The planarization and uniformity on the rear side …