The Effect of Alloying Conditions on the Formation of Al-p+ Emitter for n-Type Silicon Solar Cells

Le résumé fourni par la source

The effect of alloying conditions on the formation of Al-p+ emitter is investigated by realizing the alloying processes in terms of correlations between emitter and eutectic layer thickness. The emitter thickness and homogeneity are discussed by implementing various combinations of ramping and cooling conditions. The overall thicknesses of Al-emitter and Al-Si eutectic are determined mainly by ramping condition. The samples with thicker emitter can be found either on strong ramping or slow cooling conditions. The J0e of non-passivated p+ layer is achieved at 211 fA/cm2 with the moderate alloying condition. Based on the theoretical calculations, the N-type nonpassivated rear junction solar cells with open circuit voltage at 650mV high are achievable. Index Terms — n-type solar cell, Al-alloyed emitter, screenprinting.

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