2014
conference-paper
OpenAlex
Wei‐Chih Cheng, Jun-Rui Huang, Kuo-Yi Yen, Chi-Yu Hsieh et autres
The performance of rear SiOx/SiNxpassivated solar cell under low-irradiance intensities has been investigated. A method, defined as the voltage divergence between derived Suns-Vocand Suns-Vocmeasurement is introduced to realize the behavior of solar cells under various irradiance conditions. According to certificated result, it …
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Accès ouvert
2014
article
OpenAlex
Wenyan Cheng, Jianhua Huang, Chi-Yu Hsieh, Chih-Ming Kang et autres
Good passivation property on p-type silicon surface was obtained for SiOx /SiNx stack layer, making PERC achieve the efficiency of 20.12 %. The cell response on photoluminescence (PL) reveals that SiOx/SiNx stack layer provides good passivation property even under low irradiance intensity, …
2013
conference-paper
OpenAlex
Shao-Peng Su, Yu-Hung Huang, Chih-Ming Kang, Sean H. T. Chen
N-type silicon wafers have been more promising for developing high efficiency solar cells, and the novel technique of ion implantation has been applied for the formation of excellent quality emitters. The n-type bifacial cells have demonstrated the advantages of not only transparent …
2012
conference-paper
OpenAlex
Shao-Peng Su, Naratip Chantarat, Yu-Hung Huang, Chih-Ming Kang et autres
N-type wafer, which has high minority carrier lifetime and high tolerance of metal impurities, can provide the advantage such as no LID (Light Induced Degradation) for developing high efficiency solar cells. The ion implantation technology becomes an emerging method to be applied …
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Accès ouvert
2012
article
OpenAlex
Shao-Peng Su, Naratip Chantarat, Yuan Huang, Chih-Ming Kang et autres
In this work, the performance improvements of n-type alloyed rear junction Si solar cells have been demonstrated. Experimentally, the n+/n/p+ rear emitter cells were fabricated by using 1-5 ohm-cm 239 cm2 n-type CZ wafers. The planarization and uniformity on the rear side …