19.2% Efficiency n-Type Al-Alloyed Rear Junction Silicon Solar Cells with Implanted Front Surface Field

Le résumé fourni par la source

In this work, the performance improvements of n-type alloyed rear junction Si solar cells have been demonstrated. Experimentally, the n+/n/p+ rear emitter cells were fabricated by using 1-5 ohm-cm 239 cm2 n-type CZ wafers. The planarization and uniformity on the rear side surface are known as a crucial factor for the Al-alloyed junction formation. Therefore, a comparison of (1) isotropic etched (2) acidic polished and as-textured rear surface was investigated by realizing the influence of different polishing methods on surface morphology, inducing higher efficiency. Meanwhile, in a consideration of reducing front surface recombination for n-type rear junction solar cells, a variety of phosphorous-implanted dose concentrations with selective-FSF can be particularly applied to achieve a certified cell efficiency at 19.24%, Voc at 643.7 mV, Jsc at 37 mA/cm2 and FF at 80.78%, respectively.

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