Anisotropy-driven magnetic structures in manganese ferrite nanoparticle assemblies
Y. Ijiri, J. A. Borchers, Kathryn Krycka, A. Khelil et autres
us, gb (code pays fourni par la source)
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Y. Ijiri, J. A. Borchers, Kathryn Krycka, A. Khelil et autres
us, gb (code pays fourni par la source)
Demie Kepaptsoglou, Florian Castioni, José Ángel Castellanos-Reyes, Jorge Luis Briseño Gómez et autres
Instrumentation advances for high-resolution electron-energy-loss spectroscopy (EELS) in the scanning transmission electron microscope (STEM) over the last decade have pushed the capabilities of analytical electron microscopy into the meV range [1]. Beyond vibrational spectroscopy, it was recently demonstrated that magnons, quasiparticles which …
gb, fr, se, us (code pays fourni par la source)
Vinod K. Paidi, Yves Joly, Guillaume Radtke, Vlado K. Lazarov et autres
As silicon hits its physical limits, epitaxial graphene on SiC has emerged as a high-performance successor. While standard graphene lacks a bandgap, the semiconducting "buffer layer" (BL) on the SiC(0001) facet provides a ∼0.6 eV gap and hole mobilities superior to germanium, …
fr, gb, ca, by (code pays fourni par la source)
J. do Nascimento, Zlatko Nedelkoski, Demie Kepaptsoglou, S. Yamada et autres
gb, al, jp (code pays fourni par la source)
Zlatko Nedelkoski, J. do Nascimento, Aleksandar Skeparovski, Vlado K. Lazarov
The performances of Co-based Heusler alloys in spintronic devices are often degraded by interfacial effects. We used density functional theory to analyze the electronic structures of Co2FeSixAl1−x/Ge interfaces with Si content x from 0 to 1.0. Consistent with experimental data, interfaces with …
al, gb, cn, mk (code pays fourni par la source)
Zlatko Nedelkoski, Paul M. Sharp, J. do Nascimento, Leonardo Lari et autres
al, gb, us (code pays fourni par la source)
Ghadeer Badran, Vlado K. Lazarov, Mahmoud Dhimish
Bypass diode failure, particularly in the short-circuit mode, remains an under-addressed reliability issue in photovoltaic (PV) modules, causing severe power suppression and often leading to premature disposal of otherwise functional units. This study presents a non-destructive, field-applicable plug-in repair protocol for restoring …
gb, dk (code pays fourni par la source)
Muhammed Rishan, Prabeesh Punathil, Cathal Burns, Elisabetta Arca et autres
(2.4 ± 0.4 µmol). This integrated photocatalysis-fermentation strategy showcases a sustainable route for solar-to-chemical energy conversion, offering a promising solution for carbon valorisation through the convergence of materials science and biotechnology.
gb (code pays fourni par la source)
Julio A. do Nascimento, D. M. Cheshire, Fabrizio Cossu, Adam Kerrigan et autres
Abstract In this work, we provide fundamental insights into the scattering mechanisms of non-spin-polarised electron beams with magnetic systems, as implemented in modern meV-level scanning transmission electron microscopy electron energy loss spectroscopy (STEM-EELS) instruments. We demonstrate that the charge contribution to electron-probe-magnon …
gb (code pays fourni par la source)
Joshua Bibby, Angadjit Singh, Emily Heppell, Jack Bollard et autres
Magnetron sputtering offers a scalable route to magnetic topological insulators (MTIs) based on Cr-doped Sb2Te3. We combine a range of X-ray diffraction (XRD), reciprocal-space mapping (RSM), scanning transmission electron microscopy (STEM), scanning TEM-energy-dispersive X-ray spectroscopy (STEM-EDS), and X-ray absorption spectroscopy, and X-ray …
gb, us (code pays fourni par la source)
Julio A. do Nascimento, Daniel Pingstone, Adam Kerrigan, Kenta Yoshida et autres
The layered structures of polar oxides (i.e., metal/oxygen/metal/oxygen/…) can be utilized to engineer the atomic structures and thus tailor the electronic properties of polar oxide/semiconductor interfaces, including the band offsets between the technologically important MgO and SiC for complementary metal–oxide–semiconductor and spintronic …
gb, jp, cn, mk, us, al (code pays fourni par la source)
Demie Kepaptsoglou, José Ángel Castellanos-Reyes, Adam Kerrigan, Julio A. do Nascimento et autres
Abstract The miniaturization of transistors is approaching its limits owing to challenges in heat management and information transfer speed 1 . To overcome these obstacles, emerging technologies such as spintronics 2 are being developed, which make use of the electron’s spin as …
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