Zlatko Nedelkoski

Atomic-scale origin of rotated epitaxy and its impact on spin-electronic properties at Co2FeSi0.5Al0.5/Ge interface

J. do Nascimento, Zlatko Nedelkoski, Demie Kepaptsoglou, S. Yamada et autres

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Supplementary Material

Zlatko Nedelkoski, Julio do Nascimento, Aleksandar Skeparovski, Vlado Lazarov

Supplementary Figures 1 and 2

Supplementary Material

Zlatko Nedelkoski, Julio do Nascimento, Aleksandar Skeparovski, Vlado Lazarov

Supplementary Figures 1 and 2

Compositional dependence of the electronic structures of Co2FeSi x Al1− x /Ge half-metal/semiconductor interfaces

Zlatko Nedelkoski, J. do Nascimento, Aleksandar Skeparovski, Vlado K. Lazarov

The performances of Co-based Heusler alloys in spintronic devices are often degraded by interfacial effects. We used density functional theory to analyze the electronic structures of Co2FeSixAl1−x/Ge interfaces with Si content x from 0 to 1.0. Consistent with experimental data, interfaces with …

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Atomic-scale observation of vacancy ordering in magnetite nanoparticles

Zlatko Nedelkoski, Paul M. Sharp, J. do Nascimento, Leonardo Lari et autres

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Compositional Dependence of the Electronic Structures of Co2FeSixAl1-x/Ge Half-Metal/Semiconductor Interfaces

Vlado Lazarov, Aleksandar Skeparovski, Zlatko Nedelkoski, Julio do Nascimento

The performances of Co-based Heusler alloys in spintronic devices are often degraded by interfacial effects. We used density functional theory to analyze the electronic structures of Co₂FeSiₓAl₁₋ₓ/Ge interfaces with Si content x from 0 to 1.0. Consistent with experimental data, interfaces with …

Polar oxide/semiconductor heterojunction: MgO (111)/SiC (0001)

Julio A. do Nascimento, Daniel Pingstone, Adam Kerrigan, Kenta Yoshida et autres

The layered structures of polar oxides (i.e., metal/oxygen/metal/oxygen/…) can be utilized to engineer the atomic structures and thus tailor the electronic properties of polar oxide/semiconductor interfaces, including the band offsets between the technologically important MgO and SiC for complementary metal–oxide–semiconductor and spintronic …

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Effects of atomic structures at Co2Fe(Al0.5,Si0.5)/Ge interfaces on spin-electronic properties

Zlatko Nedelkoski, Julio A. do Nascimento, Kohei Hamaya, Vlado K. Lazarov

Abstract Efficient spin injection is essential for the development of ferromagnet—semiconductor spintronic devices with high performances, including spin transistors. Although the Co2Fe(Al0.5,Si0.5) (CFAS)/Ge hybrid structure has been identified as an outstanding platform for such devices, there is a lack of systematic analyses …

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STEM Analysis of Vacancies in Magnetite Nanoparticles

Paul M. Sharp, Adam Kerrigan, P. J. Hasnip, Zlatko Nedelkoski et autres

Paul M Sharp, Adam Kerrigan, Philip Hasnip, Zlatko Nedelkoski, Sara Majetich, Quentin M Ramasse, Demie Kepaptsoglou, Vlado K Lazarov; STEM Analysis of Vaca

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Effect of annealing on the structure and magnetic properties of Co2FeAl0.5Si0.5 thin films on Ge(111)

Barat Achinuq, C. J. Love, Demie Kepaptsoglou, Zlatko Nedelkoski et autres

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Atomic study of Hybrid Spintronic Heterostructures: Co2FeAl05Si0.5/Ge(111)

Zlatko Nedelkoski, Demie Kepaptsoglou, B. Keurbanjiang, Quentin M. Ramasse et autres

Z Nedelkoski, DM Kepaptsoglou, B Keurbanjiang, QM Ramasse, A Ghasemi, C Love, S Cavill, K Hamaya, S P Tear, VK Lazarov; Atomic study of Hybrid Spintronic H

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Origin of reduced magnetization and domain formation in small magnetite nanoparticles

Zlatko Nedelkoski, Demie Kepaptsoglou, Leonardo Lari, Tianlong Wen et autres

The structural, chemical, and magnetic properties of magnetite nanoparticles are compared. Aberration corrected scanning transmission electron microscopy reveals the prevalence of antiphase boundaries in nanoparticles that have significantly reduced magnetization, relative to the bulk. Atomistic magnetic modelling of nanoparticles with and without …

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