Haotian Wang

Thickness-Dependent Crystallization and Device Performance in Ta-Doped Ge 2 Sb 2 Te 5 Phase Change Memory

Qi Zhang, Haotian Wang, Sannian Song, Yuan Xue et autres

Reducing the size of phase change memory cells improves integration density while simultaneously lowering programming energy consumption. Among various scaling strategies, thinning the phase-change layer represents a particularly direct and practical approach. This study presents a comprehensive investigation of the thickness-dependent properties …

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Optimal stoichiometry and performance evolution in As-Se based OTS devices

Yuhao Wang, Haotian Wang, Xiangyu Fu, Yulai Zhu et autres

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Ga2Se3-based Ovonic Threshold Switching selector for high-density memory applications

Haotian Wang, Xuli Cheng, Yuhao Wang, Yue‐tao Yang et autres

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Ga₂Se₃-Based Ovonic Threshold Switching Selector for High-Density Memory Applications

Haotian Wang, Xuli Cheng, Yuhao Wang, Yue‐tao Yang et autres

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Interfacial chemistry of CuBi 2 O 4 in aqueous media: engineering strategies for energy and environmental applications

Haotian Wang, Hao Wang, Jing Gao, Yongbo Kuang

We conducted a systematic analysis of CuBi 2 O 4 's surface and interface interactions, investigated a series of novel solutions for CuBi 2 O 4 -related challenges, and summarized some of its key applications.

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Oxygen plasma activated Au-assisted mechanical exfoliation for large-area, high-quality metal phosphorus trichalcogenides flakes

Mouhui Yan, Haotian Wang, Guanghui Cao, Wei Ren

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Unveiling charge transport in monolayer and few-layer CoPS3/metal contact: Insight from C-AFM

Mouhui Yan, Haotian Wang, Wenqi Wei, Tianxiang Zhu et autres

Monolayer and few-layer CoPS3 have been successfully synthesized via an Au-assisted exfoliation technique, with their transport properties subsequently investigated by conductive atomic force microscopy. Rectification effects can be observed in CoPS3 nanosheets due to the Schottky junction formation at the Au/CoPS3 interface, …

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Ferroelectric polarization of graphene/h-BN bilayer of different stacking orders

Haotian Wang, Bowen Shi, Wen Jiang, Xuli Cheng et autres

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Spin–orbit coupling enhanced electron–phonon superconductivity in infinite-layer BaBiO2

Yaning Cui, Heng Gao, Yongchang Li, Shaowen Xu et autres

The recent discovery of infinite-layer nickel oxide superconductors has highlighted the importance of first-principles simulations. We predict an infinite-layer bismuth oxide superconductor BaBiO2, which is isostructural to NdNiO2. In this work, electronic structure, lattice dynamics, and electron–phonon interaction are studied, with special …

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Electric field effect of sliding graphene/hexagonal boron nitride heterobilayer

Bowen Shi, Haotian Wang, Wen Jiang, Yuan Feng et autres

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Complex role for thallium in PbTe:Tl from local probe studies

Trevor Keiber, Frank G. Bridges, Brian C. Sales, Haotian Wang

When PbTe, a good thermoelectric material, is doped with a few percent Tl, the figure of merit $ZT=T{S}^{2}/(\ensuremath{\rho}\ensuremath{\kappa})$ [$S$ is the Seebeck coefficient, $\ensuremath{\rho}$ the electrical resistivity, and $\ensuremath{\kappa}$ the thermal conductivity] is dramatically improved. The maximum value of $ZT$ occurs for …

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Thermoelectric performance of p-type skutterudites YbxFe4−yPtySb12 (0.8 ≤ x ≤ 1, y = 1 and 0.5)

Jung Young Cho, Zuxin Ye, Misle M. Tessema, James R. Salvador et autres

Thermoelectric performance of p-type skutterudites currently lags that of the corresponding n-type materials, and improvement of this important class of materials has become the focus of considerable research effort world-wide. Recent calculations find promising band structure features in p-type skutterudite materials of …

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