Yiqun Wan

Device Process and Architecture Aware Physical TCAD Model for Ultra-Thin Film a-IGZO Transistors

Subhali Subhechha, Hongwei Tang, Goutham Arutchelvan, Geert Eneman et autres

Performance of amorphous IGZO thin film transistors is strongly linked to their device architecture and processing. We identify the critical parameters determining device performance across bias ranges through experiments and TCAD simulations. Based on this, we present a process-aware TCAD model describing …

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Oxide Semiconductors TFTs Integration in CMOS BEOL: Device Considerations for Enabling Novel Applications

Subhali Subhechha, Nouredine Rassoul, Attilio Belmonte, Adrian Vaisman Chasin et autres

The tremendous surge in the interest in oxide semiconductors for applications such as Flash memories, 3D DRAM, RF circuits, displays, flexible electronics, is driven by the advantages of these materials over conventional choices [1]. Their CMOS back end of line (BEOL) compatibility …

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Accurate off-current evaluation by parasitic capacitance extraction in capacitor-less DRAM cells

Daisuke Matsubayashi, Subhali Subhechha, Hyungrock Oh, Nouredine Rassoul et autres

We enable the accurate extraction of the off-current (Ioff) values in capacitor-less 2-transistor (2T0C) DRAM cells by developing two experimental methods for assessing the parasitic capacitance (Cpara). We thus consider the total storage node capacitance (Ctot= CoxRtr+ Cpara) instead of the conventional …

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Dynamic Flash Memory Operation Experimentally Validated with 65nm SOI Technology

Koji Sakui, Daniele Garbin, Yoshihisa Iwata, Gautam Gaddemane et autres

Dynamic Flash Memory (DFM) have been fabricated on 300 mm SOI wafers with 65 nm technology, experimentally validating a wide "1" and "0" margin for the first time. The proposed device operates exclusively with positive polarity signals, eliminating the need for negative …

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In-Poor IGZO: Superior Resilience to Hydrogen in Forming Gas Anneal and PBTI

Anastasiia Kruv, Michiel J. van Setten, Adrian Vaisman Chasin, Daisuke Matsubayashi et autres

Integrating In–Ga–Zn oxide (IGZO) channel transistors into silicon-based ecosystems requires the resilience of the channel material to hydrogen. Standard In-rich IGZO (In = 40 metal at. %) suffers from degradation under forming gas anneal (FGA) and hydrogen-driven positive bias temperature instability (PBTI). …

Dielectric Breakdown Analysis on Bottom and Top-Gated IGZO-TFT

S. Van Beek, Adrian Vaisman Chasin, Subhali Subhechha, H.A. Deckers et autres

Reliability in IGZO thin-film transistors (TFT) is known to be limited by Bias Temperature Instability (BTI), however there are no detailed studies on other reliability mechanisms, like dielectric breakdown. We study both bottom-gated and top-gated transistors and find different area scaling trends …

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The Impact of Process Steps on Nearly Ideal Subthreshold Slope in 300-mm Compatible InGaZnO TFTs

Hongwei Tang, Dennis Han-Chung Lin, Subhali Subhechha, Adrian Vaisman Chasin et autres

While we demonstrate a back-gated (BG) amorphous Indium-Gallium-Zinc-Oxide (a-IGZO) transistors with a nearly ideal subthreshold slope (SS)$\sim ~60$mV/dec. However, SS degrades when a top-gated (TG) configuration is implemented. The energy distribution of traps inferred from temperature-dependent (T =4 K - 300 K) …

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Novel High Density 3D Buffer Memory Enabled by IGZO Channel Charge Coupled Device

Rishabh Kishore, Swaraj Bandhu Mahato, Subhali Subhechha, Jiwon Lee et autres

We propose a novel 3D Charge Coupled Device (CCD) for high density block addressable buffer memory with IGZO channel and integrable in 3D NAND Flash string architecture. To this purpose, we demonstrate the memory operation using IGZO-based planar 4-phase CCD structure with …

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Facile synthesis of Zn-doped Bi(OH)3 with upward surface band bending and its enhanced visible light photocatalytic activity

Xiaoxing Zeng, XU Zhao-di, Xiaofeng Gong, Yiqun Wan

ABSTRACT In this study, Bi(OH) 3 doped with different contents of zinc were successfully prepared via a facile solvothermal approach and characterized by various characterization technologies. The photocat- alytic performance of the obtained samples was evaluated by degradation of Rhodamine B (RhB) …

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