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Profil bibliographique

Yicong Deng

Informations fournies par OpenAlex. Research Africa ne déduit ni nationalité, ni poste, ni coordonnées personnelles.

20Publications signalées
220Citations signalées
2Affiliations récentes

Les institutions déclarées

Les domaines associés

Ga2O3 and related materialsZnO doping and propertiesAdvanced Photocatalysis TechniquesGaN-based semiconductor devices and materialsCatalysis and Hydrodesulfurization Studies

Les publications récentes

2025 article OpenAlex

β-Ga 2 O 3 Vertical U-Trench MOSFET With Nitrogen-Doped Current Blocking Layer Grown via Ex Situ and In Situ MOCVD Epitaxy

Xiaorui Xu, Yicong Deng, Zhengbo Wang, Xueli Han et autres

The epitaxially grown current blocking layer (CBL) is expected to enhance the performance of β-Ga2O3vertical MOSFETs by reducing defects and suppressing scattering, but the actual effect remains to be verified. This work fabricates and analyzes the β-Ga2O3vertical U-trench MOSFETs with nitrogen-doped CBL …

cn (code pays fourni par la source)

5 citations IEEE Electron Device Letters
2025 article OpenAlex

Demonstration of β -Ga2O3 vertical Schottky barrier diode with mesa termination assisted partially suspended field plate on MOCVD-grown epitaxial wafer

Xueli Han, Xiaorui Xu, Zhengbo Wang, Desen Chen et autres

This Letter demonstrates a beta-phase gallium oxide (β-Ga2O3) vertical Schottky barrier diode (SBD) with mesa termination assisted by a partially suspended field plate, which is fabricated on the epitaxial thick film grown by metal–organic chemical vapor deposition. The epitaxial film features a …

cn (code pays fourni par la source)

5 citations Applied Physics Letters
2025 article OpenAlex

2.87 kV/3.68 mΩ cm2 low forward voltage Ga2O3 vertical SBD with nitrogen-doped protecting ring and mesa termination

Xueli Han, Xiaorui Xu, Zhengbo Wang, Desen Chen et autres

In this paper, a vertical Ga2O3 Schottky barrier diode (SBD) with nitrogen (N)-doped protecting ring and mesa termination (NMT-SBD) is fabricated. In addition to the electric field optimization effect of the mesa termination, the NMT-SBD also features the N-doped protecting ring to …

cn (code pays fourni par la source)

2 citations Applied Physics Letters
2025 article OpenAlex

Ga2O3 Vertical SBD With Suspended Field Plate-Assisted Shallow Mesa Termination for Multikilovolt and Ampere-Class Applications

Xueli Han, Xiaorui Xu, Zhengbo Wang, Desen Chen et autres

In this work, a vertical gallium oxide (Ga2O3) Schottky barrier diode (SBD) with suspended field plate-assisted shallow mesa termination (SFPM-SBD) is proposed and fabricated. The suspended field plate is achieved by using Cl2 in the ICP etching process to facilitate isotropic etching …

cn (code pays fourni par la source)

2 citations IEEE Transactions on Electron Devices
2025 conference-paper OpenAlex

High-Voltage Ga2 O3 Vertical Schottky Barrier Diode with Suspended Field Plate Assisted Shallow Mesa Termination

Desen Chen, Xiaorui Xu, Yicong Deng, Xueli Han et autres

In this work, a vertical Ga2O3Schottky barrier diode with suspended field plate assisted shallow mesa termination (SFPM-SBD) is proposed and fabricated. The optimized self-aligned ICP etching process, which introduces Cl2to facilitate the isotropic etching of Ga2O3, is developed to form the suspended …

cn (code pays fourni par la source)

0 citations
2025 article OpenAlex

Hydrodeoxygenation of Lignin-Derived Phenolic Compounds over Highly Dispersed Pt/Al2O3–TiO2 Composite Catalyst

Chengyin Lin, Yicong Deng, Yuankai Lin, Jun Li et autres

Hydrodeoxygenation (HDO) represents a highly efficient refining pathway to convert lignin-derived phenolic compounds for the production of hydrocarbon fuels, and the selection of a suitable catalyst is pivotal for a high reaction efficiency. In this study, we introduce a novel highly dispersed …

cn (code pays fourni par la source)

8 citations Industrial & Engineering Chemistry Research
2024 article OpenAlex

Over 2 GW/cm2 low-conduction loss Ga2O3 vertical SBD with self-aligned field plate and mesa termination

Xiaorui Xu, Yicong Deng, Titao Li, Duanyang Chen et autres

In this Letter, a Ga2O3 vertical Schottky barrier diode (SBD) with self-aligned field plate and mesa termination is fabricated and studied. The combination of field plate and mesa termination can effectively make the electric field distribution uniform in the termination, and thus …

cn (code pays fourni par la source)

19 citations Applied Physics Letters

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