K.H. Kwak

IR and Raman spectroscopic data and analysis code for "Concentration-Dependent Restructuring of the Eigen-Zundel Ensemble Revealed by a Solvation-State Map of the Hydrated Proton"

Kwang‐Im Oh, Kijeong Kwac, K.H. Kwak, MINHAENG CHO

FTIR and Raman spectra of aqueous HCl solutions (0–2 M) used in the associated study on the concentration-dependent solvation structure of the hydrated proton. FTIR spectra (1000–4000 cm⁻¹) were recorded on a PerkinElmer Spectrum3 spectrometer at 1 cm⁻¹ resolution using a CaF₂ …

IR and Raman spectroscopic data and analysis code for "Concentration-Dependent Restructuring of the Eigen-Zundel Ensemble Revealed by a Solvation-State Map of the Hydrated Proton"

Kwang‐Im Oh, Kijeong Kwac, K.H. Kwak, MINHAENG CHO

FTIR and Raman spectra of aqueous HCl solutions (0–2 M) used in the associated study on the concentration-dependent solvation structure of the hydrated proton. FTIR spectra (1000–4000 cm⁻¹) were recorded on a PerkinElmer Spectrum3 spectrometer at 1 cm⁻¹ resolution using a CaF₂ …

Multilayer Transition Metal Dichalcogenide Photodetectors: Systematic Performance Enhancement through Complementary Engineering Strategies

Ganapathi Bharathi, K.H. Kwak, Sungmin Park, Seongin Hong

Two-dimensional transition metal dichalcogenides (TMDs) are promising candidates for next-generation optoelectronics; however, their multilayer configurations face fundamental performance limitations from indirect bandgap transitions that reduce radiative recombination and external quantum efficiency compared to monolayer systems. This spotlight article demonstrates four complementary engineering …

kr (code pays fourni par la source)

Advances in 2D Molybdenum Disulfide Transistors for Flexible and Wearable Electronics

K.H. Kwak, Hyewon Yoon, Seongin Hong, Byung Ha Kang

As the trajectory of developing advanced electronics is shifting towards wearable electronics, various methods for implementing flexible and bendable devices capable of conforming to curvilinear surfaces have been widely investigated. In particular, achieving high-performance and stable flexible transistors remains a significant technical …

kr, us (code pays fourni par la source)

Pieces of Existence on Canvas and Paper: About Encounters with Three Caravaggio’s Paintings and Other Educational Inspirations

K.H. Kwak

The article reflects on the essence of contemporary humanities in the educational dimension and emphasizes the importance of multidimensional dialogue based on four pillars: relationships, empathy, critical thinking and cultural context. Referring to Olga Tokarczuk’s category of a sensitive narrator, the author …

pl (code pays fourni par la source)

On the Destructive Power of Unspoken Words in Several Contemporary Books for Young People: From Deepened Reflection to School Practice

K.H. Kwak

The author of the article reflects on the role of contemporary literature for young people. Emphasizing, above all, the importance of the compensatory function of selected works, she looks for common places in books and other cultural texts that raise issues of …

pl (code pays fourni par la source)

Highly Manufacturable 64M bit Ultra Low Power SRAM Using a Novel 3-Dimensional S3 (Stacked Single-crystal Si) Cell Technology

W.S Cho, Hoon Lim, Jae Hoon Jang, Yaopeng Kang et autres

Highly manufacturable 100 nm 6T low power SRAM with single poly-Si gate technology

K. Koh, B.J. Hwang, K.H. Kwak, Y.S. Son et autres

As scaling down the device, it is difficult to control the standby leakage and device performance at the same time. In this work, 6-transistor SRAM cell using buried channel PMOS technology was introduced and the device for low power consumption was analyzed. …

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Fabrication and characteristics of novel load PMOS SSTFT (Stacked Single-crystal Thin Film Transistor) for 3-Dimensional SRAM memory cell

Young-Tae Kang, Sung Mi Jung, Jae Hoon Jang, J.H. Moon et autres

The PMOS SSTFT (stacked single-crystal thin film transistor) is developed for achieving the smallest SRAM cell size, such as 45F/sup 2/, and low power mobile applications with the single crystallization technology of the Si thin films on the insulators. The electrical properties …

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Novel 3-dimensional 46F/sup 2/ SRAM technology with 0.294um/sup 2/ S/sup 3/ (stacked single-crystal Si) cell and SSTFT (stacked single-crystal thin film transistor)

Jae Hoon Jang, S. Jung, Young-Tae Kang, W.S. Cho et autres

We have realized a 46F/sup 2/ SRAM cell size of 0.294 /spl mu/m/sup 2/ with 80 nm technology and single stack S/sup 3/ cell technology. SSTFTs and vertical node contacts are major keys in the S/sup 3/ cell technology. The stacked single …

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Highly manufacturable 32 Mb ULP-SRAM technology by using dual gate process for 1.5 V Vcc operation

D.H. Kim, Seung Ju Kim, B.J. Hwang, SungYong Seo et autres

For 1.5 V low Vcc operation and high performance, a full-CMOS ultra low power (ULP) SRAM using dual gate and Co salicide technology was developed. We evaluated the new technology including (i) 0.11 /spl mu/m fine patterning implemented by phase shift mask …

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Ultra-low power and high speed SRAM for mobile applications using single Poly-Si gate 90 nm CMOS technology

K. Koh, B.J. Hwang, G. H. Han, K.H. Kwak et autres

High speed and ultra-low power SRAM using single gate CMOS technology was developed. The drive currents of NMOSFET and PMOSFET were 410 /spl mu/A//spl mu/m and 205 /spl mu/A//spl mu/m, respectively. The random access time of 17 ns at 1.65 V operation …

kr (code pays fourni par la source)