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A music dataset comprising six emotional categories, containing a total of 3,042 samples each lasting 20 seconds. It includes 506 angry tracks, 508 fearful tracks, 507 happy tracks, 506 sad tracks, 508 sleepy tracks, and 507 uplifting tracks. Designed for music emotion …
cn (code pays fourni par la source)
Yangyang Wu, Kuan Wang, Jun Yuan, Wei Chen et autres
The super junction (SJ) structure can optimize both the blocking capability and conduction performance of unipolar power semiconductor devices. However, constrained by the intrinsic material properties of silicon carbide (SiC), no commercial manufacturing solution for SiC super junction devices has been publicly …
cn (code pays fourni par la source)
Wei Chen, Jun Yuan, Kuan Wang, Yangyang Wu et autres
In this paper, a novel SiC trench MOSFET structure is proposed, featuring deeply implanted P+ shielding regions on both sides of the trench (P+SLD1) and a P+ shielding region at the trench bottom (P+SLD2), which collectively protect the gate trench. To alleviate …
cn (code pays fourni par la source)
Mingzhe Li, Jun Yuan, Ruoshi Peng, Shiqing Xu et autres
This work proposes an optoelectronic technology utilizing $\beta$ - Ga2O3, with the development of a photoconductive assisted switch (PCAS) device. The device achieves kilovolt-level blocking capability in the off-state via a low-doped epitaxial layer and substrate. while in the on-state, optical illumination …
cn (code pays fourni par la source)
Shiqing Xu, Jun Yuan, Ruoshi Peng, Mingzhe Li et autres
Ultra-wide bandgap semiconductor material gallium oxide (Ga2O3) demonstrates great potential for power device applications owing to its exceptional material properties. However, the inherent lack of p-type doping in Ga2O3poses challenges for Schottky barrier diode (SBD), where the unprotected metal/semiconductor interface leads to …
cn (code pays fourni par la source)
Ruoshi Peng, Mingzhe Li, Shiqing Xu, Jun Yuan et autres
The $\beta-\mathrm{Ga}_{2} \mathrm{O}_{3}$ field-effect transistor (FET) fully meets the industrial demands for green development and energy efficiency. Among various device architectures, the development of vertical enhancement-mode (E -mode) Ga2O3FETs is considered essential for practical applications. This paper presents novel current aperture vertical …
cn (code pays fourni par la source)
Mingzhe Li, Jun Yuan, Shiqing Xu, Ruoshi Peng et autres
Lateral field effect transistor (FET) is of significant importance for future monolithic integration. In this work, we demonstrate an edge termination-free lateral $\beta-\mathrm{Ga}_{2} \mathrm{O}_{3}$ metal semiconductor field effect transistor (ETF-MESFET). As this device employs neither a gate dielectric nor a termination structure, …
cn (code pays fourni par la source)
Jian Li, Xiaojun Bi, Changyu Hu, Jinxuan Jin et autres
This article proposes a low-noise monolithically integrated 80-Gbps PAM4 optical receiver using multidrive noise cancellation technique. The proposed receiver integrates a multidrive noise-canceling transimpedance stage (MDNC-TIS), a CML-based differential postamplifier, auxiliary analog loops, and a PD on a single chip. The proposed …
cn (code pays fourni par la source)
Ruolan Wang, Min Liu, Chen Xu, Changji Zhou et autres
Nickel salicide is widely used in semiconductor devices owing to their advantageous properties, including low sheet resistance, minimal silicon consumption, and high work function. These materials are particularly critical as ohmic contacts in SiC power devices. However, the microstructure of nickel silicide …
cn (code pays fourni par la source)
Ruolan Wang, Mingsheng Fang, Kaichao Deng, Anli Yang et autres
Silicon carbide (SiC), as a representative wide-bandgap semiconductor material, has demonstrated significant application potential in power electronic devices due to its outstanding physicochemical properties, particularly exhibiting remarkable advantages in metal-oxide-semiconductor field-effect transistors (MOSFETs) operating under high-power-density and high-frequency conditions. A thorough elucidation …
cn (code pays fourni par la source)
Jie Song, Shuying Wu, Zhi Hong, Shengyang Zeng et autres
This paper presents a reliability study of 1653 nm single-mode DFB laser diodes designed for methane detection-an area with limited coverage compared to widely studied 1310 nm and 1550 nm InP lasers. These devices, based on InGaAsP/InP multiquantum well structures, offer excellent …
cn (code pays fourni par la source)
Xuanyu Hu, Pinhuan Li, Jie Song, Bing Yang et autres
High-quality and reliable Transmission Electron Microscopy (TEM) is an essential tool for advanced material characterization, enabling the observation of structural evolution at the atomic level under various stimuli, including thermal, electrical, and mechanical stimuli (e.g., heat, voltage, current, strain/stress). However, the validity …
cn (code pays fourni par la source)
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