G. Gramegna

D-Band Broadband High-Efficiency Frequency Doubler and Quadrupler With Optimal Load Impedance Control in 250-nm InP DHBT

Sehoon Park, Arno Hemelhof, Yang Zhang, G. Gramegna et autres

Broadband and high-efficiency D-band frequency doubler and quadrupler chains in 250-nm indium phosphide (InP) double heterojunction bipolar transistor (DHBT) are presented, together with a design methodology that provides insights into the optimal tradeoff among conversion gain (CG), dc-RF efficiency, and the number …

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A 56 Gb/s Zero-IF D-Band Beamforming Transmitter in 22 nm FD-SOI

Yang Zhang, Kristof Vaesen, Giovanni Mangraviti, Kamil Yavuz Kapusuz et autres

This article presents a 4-way transmitter (TX) array suitable for beamforming operation at D-band. The transmitter is implemented using zero-IF architecture with LO beamforming. The signal path comprises an I/Q baseband (BB) section, direct up-conversion, and a power amplifier chain, supporting a …

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A D-band Power-Combined Stacked Common-Base Power Amplifier Achieving 20.9 dBm Psat and 24.3 % PAE in a 250-nm InP HBT Technology

Arno Hemelhof, Sehoon Park, Yang Zhang, Mark Ingels et autres

This paper presents a high-power high-efficiency stacked D-band power amplifier (PA) in a 250-nm HBT technology. The pseudo-differential PA is 2-way power-combined with a power combining network exhibiting a single-transformer footprint and a low loss by reflecting asymmetry leaking to the common …

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A 56Gb/s Zero-IF D-Band Transmitter for a Beamformer in 22nm FD-SOI

Y. Zhang, Kristof Vaesen, Giovanni Mangraviti, S. Park et autres

We present a transmitter (TX) suitable for a beamformer operating between 118GHz and 147GHz. The TX is one antenna path of a 4-way beamforming TRX chip: it supports up to 64QAM modulation (30Gb/s at -25dB EVM) and achieves a data rate of …

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Tutorial: Fundamentals of Transceivers for Communication and Sensing

G. Gramegna

Wireless communication and radar systems are ubiquitous, and integrating both together is an active recent area of research. This tutorial will cover the basics of wireless communication and FMCW/PMCW/OFDM radar, while adopting a unified language and approach to encompass both communication and …

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ISSCC 2023 Evening Event: What Will Be the Essential Skills for IC Designers in the Next Decade? [Conference Reports]

Mozhgan Mansuri, Byungsub Kim, Wei-Zen Chen, National Chiao-Tung et autres

Provides society information that may include news, reviews or technical notes that should be of interest to practitioners and researchers.

III-V/III-N technologies for next generation high-capacity wireless communication

Nadine Collaert, A. Alian, A. Banerjee, G. Boccardi et autres

In this paper, we will discuss the progress that has been made in upscaling GaN and InP to a Si platform as well as making them CMOS and 3D compatible to enable the heterogeneous systems that will be needed for 5G mm-wave …

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(Why do we need) Wireless Heterogeneous Integration (anyway?)

Michaël Peeters, Siddhartha Sinha, Xin Sun, Claude Desset et autres

Heterogenous integration is rapidly becoming important to the future roadmap of mmwave and sub-THz communications and sensing front ends. This is driven by the need for compound semiconductors which offer significant benefits in power, efficiency and footprint. This integration however is of …

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InP / CMOS co-integration for energy efficient sub-THz communication systems

Claude Desset, Nadine Collaert, Siddhartha Sinha, G. Gramegna

The ever-growing needs of wireless communication call for the wide bandwidth offered by mm-wave and sub-THz frequencies. However, traditional CMOS technology becomes less efficient at those frequencies. Hence, its co-integration with alternative technologies such as III-V offers promising benefits in output power …

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Transistor modelling for mm-Wave technology pathfinding

Bertrand Parvais, Rana ElKashlan, Hao Yu, A. Sibaja-Hernandez et autres

A review of the modelling requirements to establish a Design-Technology Co-Optimization loop for mmWave Front-End Modules is presented. The example of GaN/Si technology is detailed, and recent modeling developments are explained

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A Low-Power Reflection-Coefficient Sensor for 28-GHz Beamforming Transmitters in 22-nm FD-SOI CMOS

Yang Zhang, Giovanni Mangraviti, Johan Nguyen, Zhiwei Zong et autres

Active load impedance variations in a phased array transmitter cause significant power amplifier (PA) performance degradation, in terms of output power, linearity, and power-added efficiency, which are key parameters to enable high-speed data throughputs using spectrally efficient modulation schemes. The system performance …

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Session 26 overview: RF techniques for communication and sensing: RF subcommittee

G. Gramegna, Hua Wang, Piet Wambacq

The increasing need to improve transmitter efficiency, enhance receiver linearity and robustness, and migrate electronic interfaces closer to the antenna continues to stimulate research in advanced RF techniques. The first paper in this session presents a broadband hybrid-coupler circulator for full-duplex operation. …

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