T. Hamamoto

Investigation of the Relationship between the MOSFET Structure of minimal Fab and the Characteristics of the Operation Amp

T. Hamamoto, Masashi Kase, Sommawan Khumpuang, Shiro Hara

Strategy of Device Development of Minimal Fab and Utilization of TCAD Technology

T. Hamamoto, Kazuhiro Koga, Hiroshige Kogayu, Junichi Hattori et autres

Study of controlling threshold voltage (V th) for TiN Gate SOI-CMOS using Minimal Fab

Hiroshige Kogayu, Kazuhiro Koga, T. Hamamoto, Shuichi Noda et autres

Development of a cooperative system for wire and arc additive manufacturing and machining

Hideaki Nagamatsu, Hiroyuki SASAHARA, Yuusuke Mitsutake, T. Hamamoto

Wire and arc additive manufacturing (WAAM), which is an additive manufacturing (AM) process that uses metal materials, has a higher fabricated volume per unit time but a lower fabricated shape accuracy compared with other methods. With this process, the surface roughness of …

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Evaluation of Anisotropic Biaxial Stress Induced Around Trench Gate of Si Power Transistor Using Water-Immersion Raman Spectroscopy

Takahiro Suzuki, Ryo Yokogawa, Kohei Oasa, Tatsuya Nishiwaki et autres

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Characterization technique for detection of atom-size crystalline defects and strains using two-dimensional fast-Fourier-transform sampling Moiré method

Masako Kodera, Qinghua Wang, Shien Ri, Hiroshi Tsuda et autres

Abstract Recently, we have developed a two-dimensional (2D) fast-Fourier-transform (FFT) sampling Moiré technique to visually and quantitatively determine the locations of minute defects in a transmission electron microscopy (TEM) image. We applied this technique for defect detection with GaN high electron mobility …

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Evaluation methodology for current collapse phenomenon of GaN HEMTs

Toru Sugiyama, Kohei Oasa, Akira Yoshioka, Takuo Kikuchi et autres

Methods of both evaluation and analysis of current collapse (C/C) in GaN HEMTs are discussed. Recently, guidelines to the methods of evaluation of C/C in comparing device characteristics have been required as the increase in on-resistance resulting from C/C depends significantly on …

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Impact of Plasma‐Damaged‐Layer Removal on GaN HEMT Devices

Masako Kodera, Akira Yoshioka, Toru Sugiyama, Tatsuya Ohguro et autres

Plasma‐damage during the dry‐etch process often induces degradation of the electric performance in GaN high electron mobility transistor (HEMT) devices. In this paper, the effects of wet‐etch processing on plasma‐damaged AlGaN films using various chemical solutions and propose the best chemical formulation …

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New Characterization Technique for Detection of Atomic-sized Crystalline Defects and Strain Using Moiré Method

Masahito Kodera, Q. Wang, Shien Ri, Hiroshi Tsuda et autres

Evaluation of Anisotropic Biaxial Stress in Trench Structure by Raman Spectroscopy

Takahiro Suzuki, Ryo Yokogawa, Kohei Oasa, Tatsuya Nishiwaki et autres

Evaluating Current Collapse of GaN HEMT devices by Carrier Number

Kohei Oasa, Akira Yoshioka, Y. Saito, Takuo Kikuchi et autres

Direct Carrier Number Measurement Method to Evaluate Current Collapse of GaN HEMT device

Kohei Oasa, Akira Yoshioka, Yasunori Saito, Takahiro Kikuchi et autres