X. Tang

[ROMO1 Promotes the Repair of Radiation-induced Skin Injury by Regulating Mitochondrial Function and Keratinocyte Proliferation].

Tingyi Yang, Wenling Tu, X. Tang, Mengjie DU et autres

Objective: To investigate the molecular mechanisms of early mitochondrial stress in keratinocytes induced by ionizing radiation (IR), focusing on the key role of ROMO1 in radiation-induced skin injury (RISI). Methods: -sKO mice. Results: -sKO mice showed accelerated wound healing, with a reduction …

cn, République démocratique du Congo (code pays fourni par la source)

Activation of STING sensitizes melanoma cells to radiation through ROS-induced NLRP3

Jiajia Wang, Shaokai Tang, Tingyi Yang, Fenghao Geng et autres

cn (code pays fourni par la source)

Profiling of Bile Acids Metabolism in UV-Induced Skin Injury Reveals the Protective Role of Glycodeoxycholic Acid and Glycochenodeoxycholic Acid

X. Tang, Tingyi Yang, Jiajia Wang, Hao Bai et autres

cn, fr (code pays fourni par la source)

Integrative multi-omics analysis of radionuclide-induced intestinal injury reveals the radioprotective role of L-citrulline through histone H3-mediated Cxcl3

Ping Yang, Hao Bai, Tao Yan, Xiaopeng Xu et autres

BACKGROUND: The widespread application of nuclear technology has markedly heightened the risk of extensive, uncontrolled exposure to radiation. Nevertheless, in contrast to external irradiation, the biological impacts and countermeasures against internal irradiation from radionuclides remain inadequately characterized. METHODS: Mice were administered yttrium-90 …

cn (code pays fourni par la source)

UV radiation‐induced peptides in frog skin confer protection against cutaneous photodamage through suppressing MAPK signaling

Tingyi Yang, Fenghao Geng, X. Tang, Zuxiang Yu et autres

Abstract Overexposure to ultraviolet light (UV) has become a major dermatological problem since the intensity of ultraviolet radiation is increasing. As an adaption to outside environments, amphibians gained an excellent peptide‐based defense system in their naked skin from secular evolution. Here, we …

cn (code pays fourni par la source)

Current insights and future perspectives of ultraviolet radiation (UV) exposure: Friends and foes to the skin and beyond the skin

X. Tang, Tingyi Yang, Daojiang Yu, Hai Xiong et autres

Ultraviolet (UV) radiation is ubiquitous in the environment, which has been classified as an established human carcinogen. As the largest and outermost organ of the body, direct exposure of skin to sunlight or UV radiation can result in sunburn, inflammation, photo-immunosuppression, photoaging …

cn (code pays fourni par la source)

Erratum: Basic principles of STT-MRAM cell operation in memory arrays

A. V. Khvalkovskiy, Dmytro Apalkov, Steven Watts, Roman V. Chepulskii et autres

The full text of this article is available in the PDF provided.

us (code pays fourni par la source)

Basic principles of STT-MRAM cell operation in memory arrays

A. V. Khvalkovskiy, Dmytro Apalkov, Steven Watts, Roman V. Chepulskii et autres

For reliable operation, individual cells of an STT-MRAM memory array must meet specific requirements on their performance. In this work we review some of these requirements and discuss the fundamental physical principles of STT-MRAM operation, covering the range from device level to …

us (code pays fourni par la source)

Progress and Prospects of Spin Transfer Torque Random Access Memory

E. Chen, Dmytro Apalkov, A. Driskill-Smith, A. V. Khvalkovskiy et autres

We report our progress on material improvement, device design, wafer processing, integration with CMOS, and testing of STT-RAM memory chips at 54 nm node with cell sizes of 14 and 28 F2(F=54 nm). A dual tunnel barrier MTJ structure was found to …

us (code pays fourni par la source)

Latest Advances and Roadmap for In-Plane and Perpendicular STT-RAM

A. Driskill-Smith, Dmytro Apalkov, V. Nikitin, X. Tang et autres

STT-RAM (Spin-Transfer Torque Random Access Memory) is a second-generation magnetic random access memory (MRAM) technology that is fast, non-volatile, durable, and scalable to future technology nodes [1-2]. In this paper, we present the latest advances in in-plane and perpendicular STT-RAM development and …

Fully integrated 54nm STT-RAM with the smallest bit cell dimension for high density memory application

Suock Chung, K.-M. Rho, Sarim Kim, Hongju Suh et autres

A compact STT(Spin-Transfer Torque)-RAM with a 14F2cell was integrated using modified DRAM processes at the 54nm technology node. The basic switching performance (R-H and R-V) of the MTJs and current drivability of the access transistors were characterized at the single bit cell …

us (code pays fourni par la source)

Non-volatile spin-transfer torque RAM (STT-RAM)

Emily Chen, D. K. Lottis, A. Driskill-Smith, D. P. Druist et autres

Non-volatile STT-RAM (spin transfer torque random access memory) is a new memory technology that combines the capacity and cost benefits of DRAM, the fast read and write performance of SRAM and the non-volatility of Flash with essentially unlimited endurance. It has excellent …

us (code pays fourni par la source)