Zhiyuan Sui

Study on the Resistive Switching Mechanism of Cr/HfO 2 /Cu Devices Based on First‐Principle

Han Yang, Zhiqiang Xiao, G H Liu, Jinghe Wei et autres

Driven by surging storage demand in big data and AI, conductive‐bridging random access memory (CBRAM), with high on/off ratio and low operating voltage, is a key next‐generation nonvolatile memory candidate. However, controversies over the resistive switching mechanism in HfO 2 ‐based CBRAM …

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Regulating the Resistive Switching Performance of CBRAM Devices by Controlling ALD Process Purge Time

Zhichao Liu, Zhiqiang Xiao, G. Z. Liu, Jinghe Wei et autres

Conductive bridging random access memory (CBRAM) performance relies heavily on the controllable formation and rupture of conductive filaments (CFs) in the dielectric layer. This study independently regulates the purge times of trimethylaluminum (TMA) and deionized water (H2O) in atomic layer deposition (ALD) …

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Effect of ALD temperature on hydroxyl and performance in Al 2 O 3 -based CBRAM

Yi Sun, Zhiqiang Xiao, Guozhu Liu, Jinghe Wei et autres

Abstract By preparing 7 nm-thick Al 2 O 3 dielectric layers at three temperatures (150 °C, 200 °C, and 300 °C), the effects of deposition temperature on the electrical performance and physical structure of conductive-bridging random access memory (CBRAM) devices were analyzed. …

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Structure Design and Characteristics of 3T Sense-Switch Pflash for Computing-Inmemory

Wei Zhao, Jinghe Wei, Guozhu Liu, Yidan Wei et autres

In this paper, we propose a novel structure for a 3T senseswitch pFlash (SSpF) that is specially designed for computing-in-memory. By leveraging the effect of programming pulse width modulation, the$3 ~\mathrm{T}-\text{SSpF}$can be adjusted to more than a hundred conductance states. Furthermore, the …

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The Different Responses of Wheat Rhizosphere Microbial Community and Function to Nondegradable and Biodegradable Mps Combined with 6:2 Cl-Pfesa

Zhizheng Wang, Fenghua Wang, Lingjie Xu, Yu-xin Xu et autres

Degradation Behavior and Mechanism of SONOS FLASH by Total Ionization Dose Effects

Yidan Wei, G. Z. Liu, Jin Wei, Wei Zhao et autres

In this paper, the 2T SONOS FLASH is designed and fabricated based on 180 nm embedded FLASH process which includes one MOSFET and one SONOS FLASH transistor. The FLASH transistors are programmed and erased by band-to-band tunneling-induced hot electron and Fowler-Nordheim to …

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Discrepant soil microbial community and C cycling function responses to conventional and biodegradable microplastics

Hui Yu, Xin Liu, Xiaoguo Qiu, Tao Sun et autres

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Reliability of enhancement-mode p-GaN gate GaN HEMT with multiple field plates

Yingqiang Wei, Jinghe Wei, Wei Jia Zhao, Suzhen Wu et autres

Abstract In this paper, we fabricate enhancement-mode p-GaN gate GaN HEMTs with multiple field plates (MFPs) and analyze the reliability of the devices by means of simulation and experiment. Simulations of the electric-field distribution indicate that the MFPs effectively weaken the electric …

Combined experimental and theoretical investigation on SONOS pFLASH switch

Yidan Wei, Guozhu Liu, Jinghe Wei, Xudong Liu et autres

Abstract In this paper, a new push–pull pFLASH switch is designed and fabricated based on a 110 nm eFLASH process, which includes two 2 T-pFLASH transistors and one signal transmission transistor. The pFLASH transistors are programmed and erased by band-to-band tunneling-induced hot …

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