Yidan Wei

Regulating the Resistive Switching Performance of CBRAM Devices by Controlling ALD Process Purge Time

Zhichao Liu, Zhiqiang Xiao, G. Z. Liu, Jinghe Wei et autres

Conductive bridging random access memory (CBRAM) performance relies heavily on the controllable formation and rupture of conductive filaments (CFs) in the dielectric layer. This study independently regulates the purge times of trimethylaluminum (TMA) and deionized water (H2O) in atomic layer deposition (ALD) …

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Exploring the Effect of Surface Hydrophilicity of Nanoparticles on Ocular Posterior Transport Pathway via Non‐Invasive Topical Administration

Yidan Wei, Renfang Zhu, Yan Xu, Qi Qi et autres

ABSTRACT Short residence time and off‐target accumulation restrict ocular posterior delivery via topical administration. How to improve posterior drug delivery through non‐invasive method is the issue to be addressed. Inspired by the higher posterior delivery efficiency of conjunctival‐scleral pathway and hydrophilicity‐related tissue …

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Spin–Orbit Torque-Driven Perpendicular Magnetization Switching for Artificial Synapses in Co/Ho Multilayer Systems

Shaomin Li, Yidan Wei, Yuanyuan Chen, Kangyue Qu et autres

Spin-orbit torque (SOT)-based spintronic devices have emerged as a preferred candidate for next-generation artificial synaptic devices due to their advantages of non-volatility, high speed, and low power consumption. The development of high-performance SOT-based artificial synaptic devices relies on the breakthrough in SOT-driven …

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Enhancing drug distribution to ocular posterior tissues via non-invasive topical administration of nanoparticles with tuned size

Yidan Wei, Ying Xu, Renfang Zhu, Qi Qi et autres

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Mechanism of miR-143 regulating ERK5 signaling pathway-mediated manganese-induced striatal neuronal apoptosis

Huan Mao, Yidan Wei, Cheng Liu, Jianmin Yang et autres

Overexposure manganese can induce neurotoxicity and apoptosis, in addition, miRNAs are widely involved in the apoptotic process of neurons. Therefore, it is crucial to explore the mechanism of miRNAs in manganese-induced neuronal apoptosis and then to find potential targets. Our present study …

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Methanogenic performance associated with sulfidated nanoscale zero-valent iron during anaerobic digestion of various food waste components

Dejin Zhang, Yidan Wei, Bo Zhou, Mingjiang Zhang et autres

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Degradation Behavior and Mechanism of SONOS FLASH by Total Ionization Dose Effects

Yidan Wei, G. Z. Liu, Jin Wei, Wei Zhao et autres

In this paper, the 2T SONOS FLASH is designed and fabricated based on 180 nm embedded FLASH process which includes one MOSFET and one SONOS FLASH transistor. The FLASH transistors are programmed and erased by band-to-band tunneling-induced hot electron and Fowler-Nordheim to …

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Reliability of enhancement-mode p-GaN gate GaN HEMT with multiple field plates

Yingqiang Wei, Jinghe Wei, Wei Zhao, Suzhen Wu et autres

Abstract In this paper, we fabricate enhancement-mode p-GaN gate GaN HEMTs with multiple field plates (MFPs) and analyze the reliability of the devices by means of simulation and experiment. Simulations of the electric-field distribution indicate that the MFPs effectively weaken the electric …

Enhanced removal of aqueous arsenic(III) by sulfidated nanoscale zero-valent iron under oxic conditions: Performance and mechanism

Dejin Zhang, Shuyue Wu, Bo Zhou, Yidan Wei et autres

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Synergetic interactions between zero-valent iron and schwertmannite for enhanced arsenic (III) removal: Role of morphological variations

Dejin Zhang, Yidan Wei, Shuyue Wu, Yan Dong et autres

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Challenges and strategies for ocular posterior diseases therapy via non-invasive advanced drug delivery

Qi Qi, Yidan Wei, Xin Zhang, Jian Guan et autres

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Combined experimental and theoretical investigation on SONOS pFLASH switch

Yidan Wei, Guozhu Liu, Jinghe Wei, Xudong Liu et autres

Abstract In this paper, a new push–pull pFLASH switch is designed and fabricated based on a 110 nm eFLASH process, which includes two 2 T-pFLASH transistors and one signal transmission transistor. The pFLASH transistors are programmed and erased by band-to-band tunneling-induced hot …

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