Shin-Yuan Wang

Patternable laser-oxidized Ta2O5 dielectric and TaS2 contact for optimizing subthreshold swing of MoS2 field-effect transistors

Kuan-Cheng Lu, Pen-Yuan Shih, Pin-Hsien Lin, Shih-Hao Wu et autres

Recent progress has achieved a high on-current density and a low contact resistivity for n -type field-effect transistors using two-dimensional (2D) semiconductors such as MoS 2 and WSe 2 . However, other issues with device parameters remain unresolved, such as the use …

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Investigating contact-limited scaling in sub-15-nm TMD FETs from first-principles

Kuan-Bo Lin, H. S. Liu, Shin-Yuan Wang, Shu-Jui Chang et autres

Abstract In this article, we present a first-principles field-effect transistors (FETs) contact study based on density functional theory and the non-equilibrium Green’s function method. We estimate device performance for three transition-metal-dichalcogenide (TMD) channel materials (WSe 2 , WS 2 , and MoS …

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Mechanics of Integration and Component Performance Step-up for Nanosheet Transistors with Ultrathin 2D Channel

Terry Y.T. Hung, Shu-Jui Chang, Yun-Yan Chung, Ang‐Sheng Chou et autres

Mechanical strength is a key parameter in nanosheet (NS) integration especially for ultra-thin channels such as 2D materials. MoS2bilayer enables NS channel integrity at longer gate lengths as well as C-contact geometry with an effective contact length (Leff) of up to 30 …

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BEOL-Compatible 5.6 nm Ultrathin HZO With Molybdenum Nitride Electrode and IN 2 O 3 Channel Devices for Enhanced Ferroelectricity and Reliability

Li-Cheng Teng, Yu-Che Huang, Shin-Yuan Wang, Yu-Hsien Lin

In this letter, we have successfully fabricated a metal-ferroelectricity-metal (MFM) capacitor of an ultrathin 5.6 nm HZO and ultrathin In2O3back gate devices in a back-end-of-line (BEOL) compatible process. By proposing a novel atomic layer deposition (ALD) scheme and an alternative bottom electrode …

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BEOL-Compatible Ferroelectric Capacitor with Excellent Endurance and Retention by Improving Interface Quality

Li-Cheng Teng, Yu-Che Huang, Shin-Yuan Wang, Yu-Hsien Lin et autres

In this paper, we have successfully fabricated a metal-ferroelectricity-metal (MFM) capacitor of an ultrathin 6.5 nm HZO utilizing Molybdenum (Mo) as the electrodes. We propose a novel atomic layer deposition (ALD) scheme to overcome the challenge of oxidation of the bottom Mo …

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Integration of microwave-annealed oxidation on germanium metal-oxide-semiconductor devices

Chung-Chun Hsu, Wei-Chun Chi, Ming-Li Tsai, Shin-Yuan Wang et autres

In this paper, a method that entails using microwave thermal oxidation to form a high-quality gate dielectric on Ge through surface passivation at considerably low temperatures (<400 °C) is presented. Formation of the GeOx layer was confirmed by x-ray photoelectron spectroscopy. To …

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Study of High-Ge-Content Si0.16Ge0.84Gate Stack by Low Pressure Oxidation

Wei‐Li Lee, Jun-Lin Zhang, Ming-Li Tsai, Shin-Yuan Wang et autres

In this study, we employed low-pressure oxidation (LPO) to achieve a high-quality dielectric gate stack on high-Ge-content (HGC) Si 0.16 Ge 0.84 . According to X-ray photoelectron spectroscopy depth-profiling results, lowering the oxidation pressure can drive out-diffusion of Si atoms from the …

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Highly scaled equivalent oxide thickness of 0.66 nm for TiN/HfO2/GaSb MOS capacitors by using plasma-enhanced atomic layer deposition

Ming-Li Tsai, Shin-Yuan Wang, Chao-Hsin Chien

Through in situ hydrogen plasma treatment (HPT) and plasma-enhanced atomic-layer-deposited TiN (PEALD-TiN) layer capping, we successfully fabricated TiN/HfO 2 /GaSb metal–oxide–semiconductor capacitors with an ultrathin equivalent oxide thickness of 0.66 nm and a low density of states of approximately 2 × 10 …

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InGaAs metal-oxide-semiconductor FETs with self-aligned Ni-Alloy source/drain

Shin-Yuan Wang, Chao-Hsin Chien, Jian-Yu Lin, Chun–Yen Chang

N-type InGaAs MOSFETs with self-aligned nickel-InGaAs alloy and ex-situ ALD Al2O3as gate dielectrics was successfully fabricated. The InGaAs MOSFETs exhibit an S/D resistance (RSD) that is lower than that in P-N junction devices due to the low Schottky barrier height and the …

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Demonstrating 1 nm-oxide-equivalent-thickness HfO2/InSb structure with unpinning Fermi level and low gate leakage current density

Hai-Dang Trinh, Yueh-Chin Lin, Minh-Thuy Nguyen, Hong-Quan Nguyen et autres

In this work, the band alignment, interface, and electrical characteristics of HfO2/InSb metal-oxide-semiconductor structure have been investigated. By using x-ray photoelectron spectroscopy analysis, the conduction band offset of 1.78 ± 0.1 eV and valence band offset of 3.35 ± 0.1 eV have …

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Reproducible resistance switching of a relatively thin FeOx layer produced by oxidizing the surface of a FePt electrode in a metal-oxide–metal structure

Li-Wei Feng, Yao‐Feng Chang, Chun‐Yen Chang, Ting‐Chang Chang et autres

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Improvement of resistance switching characteristics in a thin FeOx transition layer of TiN/SiO2/FeOx/FePt structure by rapid annealing

Li-Wei Feng, Chun‐Yen Chang, Yao‐Feng Chang, Ting‐Chang Chang et autres

In this paper, the influence of a 600 °C rapid thermal annealing for 60 s on the improvements of resistance switching behaviors in a TiN/SiO2/FeOx/FePt structure is reported. It is found that besides the distinct reduction in memory switching parameters in forming …

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