Mechanics of Integration and Component Performance Step-up for Nanosheet Transistors with Ultrathin 2D Channel

Le résumé fourni par la source

Mechanical strength is a key parameter in nanosheet (NS) integration especially for ultra-thin channels such as 2D materials. MoS2bilayer enables NS channel integrity at longer gate lengths as well as C-contact geometry with an effective contact length (Leff) of up to 30 nm. To enable contact integration, nearly epitaxial metal is deposited by atomic layer deposition (ALD). The extracted work function is ~6.0 eV in contact with WSe2making it a good candidate for PMOS contact. Combined with Phosphorous doping, all elements for fab-compatible contact module are included here. Just like in 3D semiconductors, channel mobility can be limited by the gate dielectrics. Here we show ~1.6x mobility enhancement by introducing an appropriate IL and surface treatment compared to our previous report [1]. The purpose of the IL is to reduce remote phonon scattering from the dielectric while the surface preparation reduces interface defects. Mobility in monolayer WSe2thus reaches relevant values at a relevant EOT of 1.4 nm.

Ce résumé expose les affirmations des auteurs. BNTIC ne l’interprète pas comme une validation indépendante des résultats.