Integration of microwave-annealed oxidation on germanium metal-oxide-semiconductor devices
Chung-Chun Hsu, Wei-Chun Chi, Ming-Li Tsai, Shin-Yuan Wang et autres
In this paper, a method that entails using microwave thermal oxidation to form a high-quality gate dielectric on Ge through surface passivation at considerably low temperatures (<400 °C) is presented. Formation of the GeOx layer was confirmed by x-ray photoelectron spectroscopy. To …
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