Y. Y. Shan

Realization of defects evolution for boosting thermoelectric properties in Sb doped PbSe

Yingfei Tang, Huijuan Wu, Keke Liu, Y. Y. Shan et autres

cn, ru, Zimbabwe (code pays fourni par la source)

Realization of Defects evolution for Boosting Thermoelectric properties in Sb Doped PbSe

Yingfei Tang, Huijuan Wu, Keke Liu, Y. Y. Shan et autres

cn, us (code pays fourni par la source)

Millimeter Positron Focusing Using a Hybrid Lens Design

Chau‐kiu Cheung, Peter Kwan, Y. Y. Shan, P.S. Naik et autres

The study of metal-semiconductor and metal-oxide-semiconductor systems with low energy positrons is made considerably easier if structures of millimeter dimension can be studied. For this reason the production of a positron beam of sub-millimeter dimension has been a long-term goal of the …

hk (code pays fourni par la source)

A study of the electric field transient at the Au/semi-insulating GaAs contact under an alternating current square-pulse bias

C. C. Ling, S. Fung, Christopher D. Beling, Y. Y. Shan et autres

Positron lifetime spectroscopy combined with a 50 V AC applied square-wave bias has been used to probe the electric field in the 2 μm region next to an Au/SI-GaAs contact. The electric fields spatially and time averaged over the reverse half-period at …

hk, cn (code pays fourni par la source)

Bi-directional phase transition of Cu/6H–SiC(0 0 0 1) system discovered by positron beam study

J.D Zhang, Huihui Weng, Y. Y. Shan, H.M Ching et autres

hk, cn (code pays fourni par la source)

Application of positron annihilation lifetime technique to the study of deep level transients in semiconductors

A. H. Deng, Y. Y. Shan, S. Fung, Christopher D. Beling

Unlike its conventional applications in lattice defect characterization, positron annihilation lifetime technique was applied to study temperature-dependent deep level transients in semiconductors. Defect levels in the band gap can be determined as they are determined by conventional deep level transient spectroscopy (DLTS) …

hk (code pays fourni par la source)

Positron-annihilation study of compensation defects in InP

Y. Y. Shan, A. H. Deng, C. C. Ling, S. Fung et autres

Positron-annihilation lifetime and positron-annihilation Doppler-broadening (PADB) spectroscopies have been employed to investigate the formation of vacancy-type compensation defects in n-type undoped liquid encapsulated Czochrolski grown InP, which undergoes conduction-type conversions under high temperature annealing. N-type InP becomes p-type semiconducting by short time …

hk, cn (code pays fourni par la source)

GaN Thin Films on SiC Substrates Studied Using Variable Energy Positron Annihilation Spectroscopy

Yongfeng Hu, Y. Y. Shan, Christopher D. Beling, S. Fung et autres

hk (code pays fourni par la source)

A Positron Annihilation Study of Compensation Defects Responsible for Conduction- Type Conversions in LEC-Grown InP

Y. Y. Shan, Ai Hong Deng, Yanjun Zhao, C. C. Ling et autres

hk, cn (code pays fourni par la source)

On the possible identification of defects using the autocorrelation function approach in double Doppler broadening of annihilation radiation spectroscopy

Christopher D. Beling, Y. Y. Shan, Sai Hung Cheung, S. Fung et autres

On the possible identification of defects using the autocorrelation function approach in double Doppler broadening of annihilation radiation spectroscopy , C D Beling, W LiMing, Y Y Shan, S H Cheung, S Fung, B K Panda, A P Seitsonen

hk, de (code pays fourni par la source)

Positron-lifetime study of compensation defects in undoped semi-insulating InP

Christopher D. Beling, A. H. Deng, Y. Y. Shan, Yanjun Zhao et autres

Positron-lifetime and infrared-absorption spectroscopies have been used to investigate the compensation defects that render undoped n-type liquid encapsulated Czochralski-grown InP semi-insulating under high-temperature annealing. The positron measurements, carried out over the temperature range of 25--300 K, reveal in the as-grown material a …

hk, cn (code pays fourni par la source)

Study of DX center in Cd0.8Zn0.2Te:Cl by positron annihilation

S. Fung, Y. Y. Shan, A. H. Deng, C. C. Ling et autres

Variable energy positron beam and positron annihilation lifetime experiments have been carried out to study the DX center in Cd0.8Zn0.2Te:Cl at 50 K. A short positron effective diffusion length of 275±25 Å and a large intensity of 79.0%±0.3% for the long lifetime …

hk, us (code pays fourni par la source)