P. D. Ye

Creep damage and crack propagation behavior of printed circuit heat exchanger manufactured by diffusion welding: from material to structure

Yu Wan, Xuefang Xie, Wenchun Jiang, Shaohua Li et autres

The printed circuit heat exchanger (PCHE) is extensively used in several applications due to exceptional compactness and heat transfer efficiency. However, the dominant failure mode of PCHE is creep fracture in its diffusion welding joints. Therefore, an accurate prediction of the creep …

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Ferroelectric Thickness Dependent Domain Interactions in FEFETs for Memory and Logic: A Phase-field Model based Analysis

Atanu Kumar Saha, Mengwei Si, Kai Ni, Suman Datta et autres

We present a phase-field simulation framework for ferroelectric (FE)-FET which captures multi-domain effects by self-consistently solving 2D time-dependent Ginzburg-Landau (TDGL), Poisson's, and semiconductor charge/transport equations. Using our phase-field model and experiments, we analyze electrostatics-driven multi-domain formation and voltage-induced polarization (P) switching for …

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InGaAs FinFET modeling using industry standard compact model BSIM-CMG

Sourabh Khandelwal, Juan Pablo Duarte, Navid Paydavosi, Yogesh Singh Chauhan et autres

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High performance atomic-layer-deposited LaLuO3/Ge-on-insulator p-channel metal-oxide-semiconductor field-effect transistor with thermally grown GeO2 as interfacial passivation layer

Jiangjiang J. Gu, Y. Q. Liu, Min Xu, George K. Celler et autres

Enhancement-mode p-channel metal-oxide-semiconductor field-effect transistor (MOSFET) on germanium-on-insulator substrate is fabricated with atomic-layer-deposited (ALD) LaLuO3 as gate dielectric. Significant improvement in both on-state current and effective hole mobility has been observed for devices with thermal GeO2 passivation. The negative threshold voltage (VT) …

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High-performance inversion-mode III-V MOSFETs enabled by atomic-layer-deposited high-k dielectrics

P. D. Ye

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Band offsets of atomic-layer-deposited Al2O3 on GaAs and the effects of surface treatment

Nhan V. Nguyen, Oleg A. Kirillov, Wen Qiang Jiang, Wenyong Wang et autres

The metal gate/high-k dielectric/III-V semiconductor band alignment is one of the most technologically important parameters. We report the band offsets of the Al/Al2O3/GaAs structure and the effect of GaAs surface treatment. The energy barrier at the Al2O3 and sulfur-passivated GaAs interface is …

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Processing and Characterization of III–V Compound Semiconductor MOSFETs Using Atomic Layer Deposited Gate Dielectrics

P. D. Ye, Glen D. Wilk, Martin M. Frank

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Interface studies of GaAs metal-oxide-semiconductor structures using atomic-layer-deposited HfO2∕Al2O3 nanolaminate gate dielectric

Tao Yang, Yi Xuan, Dmitry Y. Zemlyanov, Tian Shen et autres

A systematic capacitance-voltage study has been performed on GaAs metal-oxide-semiconductor (MOS) structures with atomic-layer-deposited HfO2∕Al2O3 nanolaminates as gate dielectrics. A HfO2∕Al2O3 nanolaminate gate dielectric improves the GaAs MOS characteristics such as dielectric constant, breakdown voltage, and frequency dispersion. A possible origin for …

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Direct-current and radio-frequency characterizations of GaAs metal-insulator-semiconductor field-effect transistors enabled by self-assembled nanodielectrics

H. C. Lin, S. K. Kim, Dong Chang, Yi Xuan et autres

Direct-current and radio-frequency characterizations of GaAs metal-insulator-semiconductor field-effect transistors (MISFETs) with very thin self-assembled organic nanodielectrics (SANDs) are presented. The application of SAND on compound semiconductors offers unique opportunities for high-performance devices. Thus, 1μm gate-length depletion-mode n-channel SAND/GaAs MISFETs exhibit low gate …

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High Performance Inversion-type InGaAs MOSFET with ALD High-k Gate Dielectric

Yimin Xuan, Yanqing Wu, H. C. Lin, Tian Shen et autres

The silicon basec complementary metal-oxide-semicoonductor (CMOS) technology now faces ever shrinking device dimensions and demands for higher performance. The latest advance in CMOS industry suggests that ALD high-k dielectrics developed for silicon may pave the way for novel channel materials in future …

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Modulation of the high mobility two-dimensional electrons in Si∕SiGe using atomic-layer-deposited gate dielectric

Keji Lai, P. D. Ye, Wei Li Pan, D. C. Tsui et autres

Metal-oxide-semiconductor field-effect-transistors using atomic-layer-deposited (ALD) Al2O3 as the gate dielectric are fabricated on the Si∕Si1−xGex heterostructures. The low-temperature carrier density of a two-dimensional electron system (2DES) in the strained Si quantum well can be controllably tuned from 2.5×1011to4.5×1011cm−2, virtually without any gate …

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