2025
conference-paper
OpenAlex
Yu-Ming Lin, C. W. Lu, C. T. Wu, Cheng-Chen Kuo et autres
Oxide semiconductors have recently gained significant attention as promising materials for next-generation memory architectures by enabling back-end-of-line (BEOL)-compatible logic and memory devices. This study reports recent progress and challenges in BEOL memory devices that utilize oxide semiconductor channels, including DRAM-like 1T-1C cells, …
tw
(code pays fourni par la source)
2025
conference-paper
OpenAlex
Katherine H. Chiang, Yen-Chung Ho, Chih‐Yu Chang, Yun-Feng Kao et autres
We successfully demonstrated the monolithic integration of a BEOL memory with advanced logic. The memory array is completely embedded in the BEOL, featuring an oxidesemiconductor channel selector and a low-temperature process capacitor. Yield and reliability were verified on a memory test chip …
tw
(code pays fourni par la source)
2012
article
OpenAlex
Jhong-Sian Wu, Chung-Te Lin, Chien‐Lung Wang, Yen‐Ju Cheng et autres
An isomerically pure anti-anthradithiophene (aADT) arranged in an angular shape is developed. Formation of the framework of aADT incorporating four lateral alkyl substituents was accomplished by a one-pot benzannulation via multiple Suzuki coupling. This newly designed 2,8-stannylated aADT monomer was copolymerized with …
tw
(code pays fourni par la source)
Accès ouvert
1996
conference-abstract
OpenAlex
Yan-Kuin Su, Chung-Te Lin, Shoou-Jinn Chang, Tai‐Ping Sun et autres
A novel surface treatment method for obtaining a high-quality CdTe/HgCdTe interface is proposed. By stacking photoenhanced native oxide and CdTe films, we successfully passivated HgCdTe. This technique is advantageous because photoenhanced native oxides can form an excellent interface and adhere to HgCdTe …
tw
(code pays fourni par la source)
1995
article
OpenAlex
Chung-Te Lin, Shoou‐Jinn Chang, Deepok K. Nayak, Yasuhiro Shiraki
High quality SiO2 layers were deposited on strained SiGe by direct photochemical vapor deposition with a deuterium lamp as the excitation source. It was found that the deposition rate increases linearly with the chamber pressure. The Auger electron spectroscopy profile shows that …
tw, jp
(code pays fourni par la source)