Integration of 0.75 V VDD Oxide-Semiconductor 1T1C Memory with Advanced Logic for an Ultra-Low-Power Low-Latency Cache Solution

Le résumé fourni par la source

We successfully demonstrated the monolithic integration of a BEOL memory with advanced logic. The memory array is completely embedded in the BEOL, featuring an oxidesemiconductor channel selector and a low-temperature process capacitor. Yield and reliability were verified on a memory test chip operating at$0.75 \mathrm{V} \mathrm{V}_{\text{DD}}$, with active energy lower than$0.5 \text{pJ} / \mathrm{b}$and a random cycle time of less than 8 ns, achieving retention exceeding 128 ms and endurance surpassing 1014cycles at 85° C. This advanced logic-compatible BEOL memory technology offers a customizable, ultra-low-power, low-latency cache solution with a higher density than SRAM.

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