Eric A. Shaner

Optical characterization of deep-level defects in n-type Al x In y Ga 1− x − y P for the development of solid-state photomultiplier analogs

Andrew M. Armstrong, Evan M. Anderson, Lisa Caravello, Eduardo García-Martínez et autres

Abstract Characterizing intrinsic defects is an essential step in evaluating materials for novel optoelectronic device applications. For photomultipliers, suppressing dark currents is critical, but a tradeoff is present between maximizing the band gap while remaining sensitive to the wavelength of interest and …

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Sensing Few Electrons Floating on Helium with High-Electron-Mobility Transistors

Mayer M. Feldman, Gregory D. Fuchs, Tao Liu, L. D'Imperio et autres

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Sensing Few Electrons Floating on Helium with High-Electron-Mobility Transistors

Mayer M. Feldman, Gordian Fuchs, Tiffany T. Liu, Luke A. D'Imperio et autres

We report on low-frequency measurements of few electrons floating on superfluid helium using a bespoke cryogenic cascode amplifier circuit built with off-the-shelf GaAs High-Electron-Mobility Transistors (HEMTs). We integrate this circuit with a Charge-Coupled Device (CCD) to transport the electrons on helium and …

Exploring AlGaInP for Use in Si Photomultiplier Analogs

Evan M. Anderson, Andrew M. Armstrong, Lisa N. Caravello, Eduardo García-Martínez et autres

We present a materials study of AlGaInP grown on GaAs leveraging deep-level optical spectroscopy and time resolved photoluminescence. Our materials may serve as the basis for wide-bandgap analogs of silicon photomultipliers optimized for short wavelength sensing.

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Exploring AlGaInP for use in Si photomultiplier analogs

Evan M. Anderson, Andrew M. Armstrong, Lisa Caravello, Eduardo García-Martínez et autres

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Apparatus and method to measure semiconductor optical absorption using microwave charge sensing

Eric A. Shaner

A time-resolved microwave reflectance apparatus comprises a pulsed or modulated optical source that irradiates a semiconductor sample with an excitation pump beam, a microwave oscillator that irradiates the sample with a continuous beam of microwaves, and a microwave detector that detects the …

Tunable surface plasmon devices

Eric A. Shaner

A tunable extraordinary optical transmission (EOT) device wherein the tunability derives from controlled variation of the dielectric constant of a semiconducting material (semiconductor) in evanescent-field contact with a metallic array of sub-wavelength apertures. The surface plasmon resonance wavelength can be changed by …

All-epitaxial resonant cavity enhanced long-wave infrared detectors for focal plane arrays

Priyanka Petluru, Aaron J. Muhowski, Abhilasha Kamboj, Noah C. Mansfield et autres

We demonstrate a monolithic all-epitaxial resonant-cavity architecture for long-wave infrared photodetectors with substrate-side illumination. An nBn detector with an ultra-thin (t≈350 nm) absorber layer is integrated into a leaky resonant cavity, formed using semi-transparent highly doped (n++) epitaxial layers, and aligned to …

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Extended-Short-Wavelength Infrared Detectors using Novel Quaternary III-V Alloys on InAs.

John F. Klem, Jonathon T. Olesberg, Samuel D. Hawkins, P. H. Weiner et autres

This paper describes objective technical results and analysis.Any subjective views or opinions that might be expressed in the paper do not necessarily represent the views of the U.

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Recombination rate analysis in long minority carrier lifetime mid-wave infrared InGaAs/InAsSb superlattices

Rigo A. Carrasco, Christian P. Morath, Perry C. Grant, Gamini Ariyawansa et autres

Gallium is incorporated into the strain-balanced In(Ga)As/InAsSb superlattice system to achieve the same mid-wave infrared cutoff tunability as conventional Ga-free InAs/InAsSb type-II superlattices, but with an additional degree of design freedom to enable optimization of absorption and transport properties. Time-resolved photoluminescence measurements …

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Extended-short-wavelength infrared AlInAsSb and InPAsSb detectors on InAs

John F. Klem, Jonathon T. Olesberg, Samuel D. Hawkins, Phillip H. Weiner et autres

We have fabricated and characterized AlInAsSb- and InPAsSb-absorber nBn infrared detectors with 200 K cutoff wavelengths from 2.55 to 3.25 μm. Minority-carrier lifetimes determined by microwave reflectance measurements were 0.2-1.0 μs in doped n-type absorber materials. Devices having 4 μm thick absorbers …

All-epitaxial long-range surface plasmon polariton structures with integrated active materials

Leland Nordin, Priyanka Petluru, Aaron J. Muhowski, Eric A. Shaner et autres

We demonstrate all-epitaxial structures capable of supporting short- and long-range surface plasmon polariton (SRSPP and LRSPP) modes in the long-wave infrared region of the electromagnetic spectrum. The SRSPP and LRSPP modes are bound to the interfaces of a buried heavily doped (n++) …

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