1992
conference-paper
OpenAlex
Steven M. Baier, J. Stronczer, B. L. Grung, David Grider et autres
ABSTRACTThis paper describes a CMOS-like readout technology using GaAs heterostructure field effect transistors. Bandgapengineering techniques are described which provide complementaiy p-channel and n-channel GaAs FETs attractive forperforming advanced signal processing functions with minimal power consumption and with precision operation in harsh environments. …
us
(code pays fourni par la source)
1983
article
OpenAlex
M. Asif Khan, R. A. Skogman, R. G. Schulze, M. Gershenzon
High quality single crystal films of AlxGa1−xN have been grown on sapphire substrates using low pressure metalorganic chemical vapor deposition at 915 °C over the entire range of x. Electrical and optical properties of the layers were measured. Electrical compensation by Be+ …
us
(code pays fourni par la source)
1983
article
OpenAlex
M. Asif Khan, R. A. Skogman, R. G. Schulze, M. Gershenzon
High quality single crystal GaN films with extremely uniform thicknesses have been grown in low pressure metalorganic chemical vapor deposition system using the reaction of (C2H5)3Ga with NH3. Electrical and optical properties of the layers were measured. Schottky barriers were fabricated after …
us
(code pays fourni par la source)
1980
conference-paper
OpenAlex
T. C. Lee, J. Skogen, R. G. Schulze, Enrique Bernal et autres
We report in this paper the development of an automated thermoplastic holographic camera which produces reproducible results from cycle-to-cycle and from sample to sample. Design innovations and performance characterization of the camera are described; its use in holographic interferometry is also illustrated.
us
(code pays fourni par la source)
1979
article
OpenAlex
Paul Petersen, R. G. Schulze, Sindra Peterson
The objective of this research program was to further develop the synthesis-solute-diffusion (SSD) and liquid-phase epitaxy (LPE) techniques for the growth of high-quality gallium phosphide. This program resulted in the growth of epitaxial layers of GaP which had excellent growth morphology and …
1977
report
OpenAlex
P. E. Petersen, R. G. Schulze, Marty Scott
The objective of this research program is to develop the solution-growth technology of GaP so that crystals of sufficient size and uniformity can be produced for Air Force photodetector applications. To accomplish this objective two growth techniques, bulk solution growth (BSG) and …
1977
conference-paper
OpenAlex
P. E. Petersen, R. G. Schulze
The photoconductive properties of copper doped LPE GaP have been investigated. The photoresponse of as-grown surfaces extends from 2.2 to 5.0 eV. Photoconductive gains as high as 105have been measured. The photoconductive response time to low levels of illumination is typically a …
us
(code pays fourni par la source)
1974
article
OpenAlex
R. G. Schulze, P. E. Petersen
High-resistivity copper-doped GaP has been prepared by solution growth from a copper-doped gallium melt. Photoconductive effects have been studied in these crystals. Compared to previously reported results these crystals are characterized by (i) high sensitivity at lower light levels, (ii) faster response …
us
(code pays fourni par la source)
1974
article
OpenAlex
Paul W. Kruse, R. G. Schulze
us
(code pays fourni par la source)
1973
article
OpenAlex
John B. Flynn, P. E. Petersen, R. G. Schulze
This program was undertaken as the first phase toward the development of fast, high gain solid state photodetectors capable of replacing photomultipliers, vidicons or similar devices in strapdown sensors for attitude reference systems. The underlying device concept for this first phase was …
1969
article
OpenAlex
Paul W. Kruse, S. T. Liu, R. G. Schulze, Samuel Peterson
us
(code pays fourni par la source)
1969
article
OpenAlex
Paul W. Kruse, R. G. Schulze