Konrad Seidel

From compositional tuning to thermal budget engineering: Strategies to mitigate the wake-up effect in HZO and Al-doped HZO thin films

David Lehninger, Konrad Seidel, Maximilian Lederer

This paper investigates the wake-up phenomenon in ferroelectric $$\text {Hf}_{x}\text {Zr}_{1-x}\text {O}_{2}$$ (HZO) thin films for non-volatile memory integration. While optimizing the Hf content (x) and film thickness can mitigate the initial pinched loop behavior, both pathways incur severe penalties in remanent …

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Enhanced TDDB reliability in superlattice based HZO ferroelectric films

Alison E. Viegas, Konstantinos Efstathios Falidas, Ayse Sünbül, Maximilian Everding et autres

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Toward stable FeFET multi-level cell operations using novel weight freezing methodology with recovery cycling scheme for neuromorphic applications

Jing-Hua Hsuen, Hsien-Yang Liu, Maximillian Lederer, Yannick Raffel et autres

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Variability and Retention Investigation for Ferroelectric FET with Pseudo-MFMIS Structure

Ryo Ono, Kensuke Ota, Yusuke Shuto, Jun Okuno et autres

We systematically studied device-to-device variability and retention in pseudo metal-ferroelectric-metal-insulator-semiconductor (MFMIS) based ferroelectric memory. Threshold voltage ($\boldsymbol{V}_{\text {th }}$) variability is found to increase with shrinking MFM capacitor area, which is consistent with the random polarization switching in polycrystalline$\text{Hf}_{1-\mathrm{x}} \text{Zr}_{\mathrm{x}} \mathrm{O}_{2}$. In …

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Variability and Retention Investigation for Ferroelectric FET with Pseudo-MFMIS Structure

IEEE International Symposium on Reliability Physics 2026, Kentaro Akiyama, Ruben Alcala, Maximilian Lederer et autres

This work systematically investigates variability and retention in MFMIS ferroelectric memory. Vth variability, increasing with smaller MFM size due to random HZO polarization switching, is suppressed by channel scaling. Retention degradation is dominated by charge loss, becoming severe with thinner HZO or …

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Performance Enhancement in Hafnium Oxide Through Homogeneous and Heterogeneous co‐Doping Strategies

Shouzhuo Yang, David Lehninger, Markus Neuber, Amir Pourjafar et autres

ABSTRACT Fluorite structure ferroelectrics, especially hafnium oxide, are widely investigated for their application in non‐volatile memories, sensors, actuators, RF devices, and energy harvesters. Due to the metastable nature of the ferroelectric phase in these materials, dopants, and process parameters need to be …

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Ferroelectric HZO Capacitor on CoSi 2 Electrode: Exploring CMOS-Compatible Alternative to TiN and W

Justine Barbot, Hee Eng Gek, Wilson Entalai Thomas Akin, Markus Peller et autres

Ferroelectric Capacitors (FeCAPs) based on HfZrO2(HZO) are promising building blocks for ferroelectric (FE) Non-Volatile Memories (NVM). In this work, we investigate for the first time the deposition of FE HZO on top of epitaxial Cobalt Silicide (CoSi2), a mainstream CMOS material. While …

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BEOL Ferroelectric Compute-in-Memory Ising Machine for Simulated Bifurcation

Yu Qian, Alptekin Vardar, Konrad Seidel, David Lehninger et autres

Computationally hard combinatorial optimization problems are pervasive in science and engineering, yet their NP-hard nature renders them increasingly inefficient to solve on conventional von Neumann architectures as problem size grows. Ising machines implemented using dynamical, digital and compute-in-memory (CiM) approaches offer a …

BEOL Ferroelectric Compute-in-Memory Ising Machine for Simulated Bifurcation

Yu Qian, Alptekin Vardar, Konrad Seidel, David Lehninger et autres

Computationally hard combinatorial optimization problems are pervasive in science and engineering, yet their NP-hard nature renders them increasingly inefficient to solve on conventional von Neumann architectures as problem size grows. Ising machines implemented using dynamical, digital and compute-in-memory (CiM) approaches offer a …

Highly Scaled FRAM Technology in 22FDX ® Achieving Sub 1 V Operation

Franz Müller, V. Iurchuk, Alison E. Viegas, Nandakishor Yadav et autres

We report on the successful integration of a ferro-electric random-access memory (FRAM) in GlobalFoundries 22FDX® node. The ferroelectric capacitor (FeCap) of the 1T1C-bitcell is located in the Back-End-of-Line (BEoL) be-tween M3 and M4. Using Al co-doped HfxZr1−xO2(HZAO), remanent polarization (2PR) above 40 …

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Structural and Electrical Behavior of Swift Heavy Ion Irradiated Hafnium Oxide Polymorphs in Ferroelectric and Resistive Memories

Philipp Schreyer, David Lehninger, Tobias Vogel, Tianren Zhang et autres

ABSTRACT Hafnium oxide (HfO 2 ) exhibits multiple polymorphs, each with distinct properties and is a promising material for non‐volatile memory technologies in radiation‐harsh environments. To gain a comprehensive understanding of the radiation response of HfO 2 ‐based memory devices requires detailed …

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Temperature-Dependent Detrapping Behavior of p-/n-Type Ferroelectric FETs With Si/SiGe Channel

Shouzhuo Yang, Franz Müller, Yannick Raffel, Nandakishor Yadav et autres

The growing demand on new computer architectures, particularly in applications such as in-memory computing, may necessitate embedded non-volatile memories. Ferroelectric field-effect transistors offer both n-type and p-type functionality based on conventional CMOS technology. However, the issue of carrier (de)trapping, which shifts the …

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