Highly Scaled FRAM Technology in 22FDX ® Achieving Sub 1 V Operation

Le résumé fourni par la source

We report on the successful integration of a ferro-electric random-access memory (FRAM) in GlobalFoundries 22FDX® node. The ferroelectric capacitor (FeCap) of the 1T1C-bitcell is located in the Back-End-of-Line (BEoL) be-tween M3 and M4. Using Al co-doped HfxZr1−xO2(HZAO), remanent polarization (2PR) above 40 µC/cm2and coercive field (2EC) of 1.4 MV/cm are achieved for scaled FeCaps of 0.01-0.04 µm2. Compared to state-of-the-art HZO, the lower leakage of HZAO results in improved data retention, even at elevated temperatures of 150 °C for 1 h. The FRAMs are combined in segments of 2 bitlines (BL,$\overline {{\text{BL}}} $ ) with a latch sense amplifier (LSA). In the segments sub-1 V switching at 8 nm HZAO film thickness is demonstrated. Operating at switching voltages of 1.5 V, endurance cycling of > 1012is shown. Sub-ECoperation and maintained charge in the FRAM node enables subsequent non-destructive readout capability.

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