Matthias Hocker

Combined depth-resolved cathodoluminescence spectroscopy and transmission electron microscopy on Al(Ga)N multi quantum well structures

Matthias Hocker, K. Thonke, Yueliang Li, Johannes Biskupek et autres

Abstract A stack of five Al(Ga)N-based quantum wells is investigated by combined laterally and depth resolved cathodoluminescence (CL) spectroscopy in order to distinguish lateral and vertical inhomogeneities of these wells. Transmission electron microscopy (TEM) micrographs provide data for the real sample structure, …

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Luminescence behavior of semipolar (101¯1) InGaN/GaN “bow-tie” structures on patterned Si substrates

Jochen Bruckbauer, Carol Trager-Cowan, Ben Hourahine, Aimo Winkelmann et autres

In this work, we report on the innovative growth of semipolar “bow-tie”-shaped GaN structures containing InGaN/GaN multiple quantum wells (MQWs) and their structural and luminescence characterization. We investigate the impact of growth on patterned (113) Si substrates, which results in the bow-tie …

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Tiefenaufgelöste Kathodolumineszenz-Spektroskopie-Untersuchungen an nitridischen Halbleiterstrukturen

Matthias Hocker

Three-dimensional cathodoluminescence characterization of a semipolar GaInN based LED sample

Matthias Hocker, Pascal Maier, Ingo Tischer, Tobias Meisch et autres

A semipolar GaInN based light-emitting diode (LED) sample is investigated by three-dimensionally resolved cathodoluminescence (CL) mapping. Similar to conventional depth-resolved CL spectroscopy (DRCLS), the spatial resolution perpendicular to the sample surface is obtained by calibration of the CL data with Monte-Carlo-simulations (MCSs) …

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Formation of I2-type basal-plane stacking faults in In0.25Ga0.75N multiple quantum wells grown on a (101¯1) semipolar GaN template

Yueliang Li, Haoyuan Qi, Tobias Meisch, Matthias Hocker et autres

In this work, I2-type basal-plane stacking faults (BSFs) were observed in In0.25Ga0.75N multiple quantum wells (MQWs) grown on a (101¯1) semipolar GaN template by high-resolution transmission electron microscopy. The structure and formation mechanisms of the I2-type BSFs at the GaN-InGaN interface were …

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Determination of axial and lateral exciton diffusion length in GaN by electron energy dependent cathodoluminescence

Matthias Hocker, Pascal Maier, Lisa Jerg, Ingo Tischer et autres

We demonstrate the application of low-temperature cathodoluminescence (CL) with high lateral, depth, and spectral resolution to determine both the lateral (i.e., perpendicular to the incident primary electron beam) and axial (i.e., parallel to the electron beam) diffusion length of excitons in semiconductor …

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Stacking fault emission in GaN: Influence of n-type doping

Matthias Hocker, Ingo Tischer, Benjamin Neuschl, K. Thonke et autres

We present spatially and spectrally resolved cathodoluminescence investigations on the cross section of semipolar (112¯2) gallium nitride epitaxial layers with high background doping level. The locally varying high carrier concentration leads in emission to a free electron recombination band (FERB) governed on …

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Development of semipolar (11-22) LEDs on GaN templates

Brian Corbett, Zhiheng Quan, Duc V. Dinh, Grzegorz Kozłowski et autres

We report on blue and green light-emitting-diodes (LEDs) grown on (11-22)-GaN templates. The templates were created by overgrowth on structured r-plane sapphire substrates. Low defect density, 100 mm diameter GaN templates were obtained by metal organic vapour phase epitaxy (VPE) and hydride …

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Influence of trench period and depth on MOVPE grown (112¯2) GaN on patterned r-plane sapphire substrates.

Marian Caliebe, Sushil Tandukar, Zongzhe Cheng, Matthias Hocker et autres

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Semipolar GaN‐based heterostructures on foreign substrates (Phys. Status Solidi B 1/2016)

F. Scholz, Marian Caliebe, Gulnaz Gahramanova, Dominik Heinz et autres

Semipolar GaN heterostructures are promising for future green light emitters, because respective GaInN quantum wells are characterized by a reduced piezo-electric field as compared to their polar counterparts, which is expected to be advantageous for the radiative recombination probability of the carriers …

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Semipolar GaN‐based heterostructures on foreign substrates

F. Scholz, Marian Caliebe, Gulnaz Gahramanova, Dominik Heinz et autres

Abstract This paper reviews our recent investigations about semipolar GaN‐based optoelectronic heterostructures grown on foreign substrates. Two basically different approaches are discussed, both making use of epitaxial growth in the polarc‐direction to minimize any crystalline defects. By selective area growth, stripes with …

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Optical properties of defects in nitride semiconductors

Ingo Tischer, Matthias Hocker, Benjamin Neuschl, Manfred Madel et autres

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