M. Khaouani

Experiment and simulation in silicon PN-junction photodetectors: Insights into electrical and optical transport

M. Khaouani, Andrea Sessa, Sebastiano De Stefano, Hichem Rouigueb et autres

Silicon PN junctions remain central to optoelectronic technologies due to their maturity and CMOS compatibility. We report the fabrication and comprehensive optoelectronic characterization of a silicon PN-junction photodiode demonstrating stable operation over a wide temperature range. The device exhibits excellent diode behavior, …

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Numerical optimization of hybrid 2D/3D and tandem perovskite/silicon HTJ solar cells, based on an experimentally validated MAPbI 3 cell: influence of HTL doping and temperature

Hichem Rouigueb, M. Khaouani, Salim Kerai, Abderrahmane Zakarya Djennati et autres

Abstract In this work, we carry out an in-depth numerical study aimed at optimizing the performance of a 2D/three-dimensional perovskite-based tandem cell. We start from a reference cell fluorine-doped tin oxide/TiO 2 /MAPbI 3 /Spiro-OMeTAD, experimentally validated with a power conversion efficiency …

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Simulation Validation and Performance Optimization of Tandem Perovskite/Silicon Solar Cells Based on Experimental Single-Junction Perovskite Solar Cell

Mohammed Belbachir, Abderrahmane Zakarya Djennati, Salim Kerai, M. Khaouani et autres

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Enhancing InGaAs/InAs/InSb/InP HEMT photodetector performance with black phosphorus-doped boron: Insights from DFT and Atlas Silvaco simulations

M. Khaouani, Ahmed Azzouz‐Rached, Khalid Mujasam Batoo, Muhammad Farzik Ijaz et autres

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SPSPT Switch Based AlN/GaN/AlGaN HEMT on Ku to Ku to V-Band for Satellite Application

Irid Sidi Mohamed Hadj, M. Khaouani, Imane Four, Zakarya Kourdi et autres

This paper details the design, fabrication, and characterization of a single-pole-single-throw (SPST) switch leveraging Aluminum Nitride/Gallium Nitride/Aluminum Gallium Nitride High Electron Mobility Transistor (AlN/GaN/AlGaN HEMT) technology specifically tailored for Ku to V-band satellite applications. The switch targets high-frequency operation within the 40 …

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Investigation of electronic and optical properties of InAsSb/GaAs quantum well solar cell (QWSC)

Soufyane Taleb, M. Khaouani, Ibrahim Lagraa

This paper provides a detailed theoretical analysis of a newly developed InAsSb/GaAs quantum well solar cell (QWSC). The study investigates how critical parameters, including the number and thickness of InAsxSb1-x quantum well (QW) layers, the GaAs barrier width, and operating temperature, affect …

HTL material variation of Graphene/ITO/TiO2/MAPbI3/spiro-OMeTAD solar cells under high temperature effect

Abderrahmane Zakarya Djennati, Salim Kerai, M. Khaouani

Perovskite-based solar cells have recently gained attention as a potentially viable option to replace conventional photovoltaic technologies, offering high efficiency and low cost. In this work, we present a numerical simulation of ITO/TiO2/MAPbI3/OMeTAD solar cell under Silvaco TCAD Tools; the devices exhibit …

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Improved AlGaN–GaN MQW LED performance incorporating InAlN MLB and AlN back barrier: Li-Fi applications

Zakarya Kourdi, Haroun Errachid Adardour, Imane Four, M. Khaouani

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Corrigendum to “120 GHz bandwidth of UV graphene/AlGaN/AlN/GaN/AlGaNP-I-N photodetector”[Opt. Mater. 148 (2024) 114846]

M. Khaouani, Zakarya Kourdi, Z. Djannati, Soumia Taleb et autres

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120 GHz bandwidth of UV graphene/AlGaN/AlN/GaN/AlGaNP-I-N photodetector

M. Khaouani, Zakarya Kourdi, Z. Djannati, Soumia Taleb et autres

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Improved GaN-based Current Aperture Vertical Electron Transistor (CAVET)

HADJEM Dalila, Zakarya Kourdi, Imane Four, M. Khaouani

The objectives of this research are to improve and optimize a vertically structure HEMT device based on AlGaN/GaN heterojunctions. This novel proposed structure with double gate command would allow for a better dispersion of the electric field, with peaks lower and farther …

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Improved performance HEMT device with backup bulk for LNA application

Zakarya Kourdi, Imane Four, M. Khaouani

Abstract This study proposes a 30 nm gate length double-gate InAlN/GaN on a 4H-SiC substrate high-electron-mobility transistor. Different electrical characteristics such as DC, AC, capacity and noise analysis were performed through TCAD device simulations. The proposed device exhibited a maximum drain current …

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