Genquan Han

Electric field reconfiguration in W/ β -Ga2O3 Schottky barrier diodes under negative bias stress

Jiamin Liao, Xiang Zheng, Yibo Wang, Xiaole Jia et autres

In this work, the characteristics of W/Ga2O3 Schottky barrier diodes with Al2O3 passivation under negative bias stress (NBS) are investigated. Interestingly, the NBS treatment yields a significant 91% reduction in reverse leakage current (Ileakage) and a 29.7% enhancement in breakdown voltage (Vbreakdown), …

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Endurance beyond 10 billion cycles in wurtzite ferroelectrics by confining nitrogen vacancies

Ruiqing Wang, Feng Zhu, Haoji Qian, Jiuren Zhou et autres

Wurtzite ferroelectrics could provide a route to wafer-scale integrated ferroelectric memories but are limited by endurance, typically failing at ~10 8 cycles. We identified nitrogen-vacancy ( V N ) clustering and long-range percolative migration as the defect-mediated pathways that drive leakage-current growth …

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zenDot: An LLM-integrated quantum TCAD platform for semiconductor quantum-device design and optimization automation

Zeheng Wang, Yan Liu, Yue Hao, Genquan Han

Semiconductor quantum-device design still lacks an integrated Technology Computer-Aided Design (TCAD)-like environment that connects material geometry, quantum many-body simulation, and automated design. Here we introduce zenDot, a large-language model (LLM)-integrated quantum TCAD platform that links a material-labelled device state to a unified …

Improved Interface Quality in β -Ga 2 O 3 MOSFETs With a Crystalline (AlGa) 2 O 3 Cap

Xiaole Jia, Shuqi Huang, Yibo Wang, Bochang Li et autres

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A Unified Electrostatic-to-Spin Framework for Asymmetric Multi-Gate CMOS Quantum Devices

Zeheng Wang, Yan Liu, Yue Hao, Genquan Han

In advanced complementary metal-oxide-semiconductor (CMOS) quantum chips, compact gate stacks make it difficult to connect lithographic geometry, electrostatic confinement and many-electron spin filling in one transparent model. This connection is central to design-technology co-optimization (DTCO). Here we develop a reduced-order analytical framework …

A Unified Electrostatic-to-Spin Framework for Asymmetric Multi-Gate CMOS Quantum Devices

Zeheng Wang, Yan Liu, Yue Hao, Genquan Han

In advanced complementary metal-oxide-semiconductor (CMOS) quantum chips, compact gate stacks make it difficult to connect lithographic geometry, electrostatic confinement and many-electron spin filling in one transparent model. This connection is central to design-technology co-optimization (DTCO). Here we develop a reduced-order analytical framework …

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Experimental Study of Variations in HfO₂-Based 3-D Trench FeRAM

Weiwen Pan, W T Zhang, Fei Yu, Peiyuan Du et autres

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A 1-Transistor Synapse-Based Analog Multiply–Accumulate Acceleration Macro

Junru Qu, Jiabao Ye, Dong Liu, Wannian Wang et autres

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A design and comprehensive simulation of a channel-all-around FeFET for high density memory application

Xiaomin Yang, Hongrui Zhang, Di Wang, Kai Xiong et autres

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Self-Powered Solar-Blind Photodetector Based on a Type-I Bi₂Te₃/ β -Ga₂O₃ Heterojunction With Ultralow Dark Current and Ultrafast Response

Peimin Gu, Xiaoxi Li, Haoji Qian, Jiajia Chen et autres

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Reduced Operating Voltage and Enhanced Endurance in Defect-Engineered HZO MFS Ferroelectric Capacitors With Nondestructive Read

Peiyuan Du, H C Liu, Dongya Li, Yutai Man et autres

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Annealing-Driven Strain-Relaxation Transition and Its Direct Impact on Transport in Heteroepitaxial β -Ga₂O₃ MOSFETs

Chunxiao Yu, Y N Wu, Yibo Wang, Bochang Li et autres

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