Jeong‐Hoon Oh

Decoding Overlapping Lower-Limb Afferent Pathways from Human Epidural Spinal Recordings

Alexander G. Steele, Milton Candela, Gracie Hufft, Amanda Howes-Keith et autres

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Exoskeleton Rehabilitation for Complete Thoracic Spinal Cord Lesion: A Case Study

Rina Xue Li Choo, Jeong‐Hoon Oh, Hai‐Bin Yu, Boon Chong Kwok

Background: Spinal cord injury is a life-changing condition for individuals who have previously been independent in activities of daily living. Motor recovery prognosis for individuals with complete spinal cord lesion above thoracic level ten is poor after nine months of injury. Although …

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Study on Dry Etching of iCVD‐Grown pV3D3 Dielectric Polymer Film

Jueun Baek, Yu‐Kyung Kim, Jeong‐Hoon Oh, Junghyun Park et autres

Abstract Polymer dielectric materials are promising candidates for next‐generation electronics due to their cost‐effectiveness, molecular‐level structural tunability, and mechanical deformability. Among various fabrication techniques, initiated chemical vapor deposition (iCVD) enables high‐purity polymer dielectric films with robust insulating properties. However, the lack of …

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Transcutaneous stimulation of the cervical spinal cord facilitates motoneuron firing and improves hand-motor function after spinal cord injury

Nikhil Verma, Jeong‐Hoon Oh, Ernesto H. Bedoy, Nikole Chetty et autres

A multicathode transcutaneous spinal cord stimulation (tSCS) array, combined with high-density electromyography (HDEMG) was used to precisely characterize selectivity in recruitment of motor pools in the cervical spinal cord. Through surface HDEMG-based motor unit extraction, the study demonstrated that tonic, subthreshold tSCS …

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First Demonstration of 16nm Pitch Subtractive Ru Interconnects for Advanced Technology Nodes

C. Penny, Koichi Motoyama, Huai Huang, S. Hosadurga et autres

A Study on the Origin of Dynamic Charge Loss of Next Generation DRAM Cell Array Transistor

Moonyoung Jeong, Hyungjun Noh, Sangho Lee, Yootak Jun et autres

Dynamic charge loss of next generation DRAM with a cell array transistor consisting of a bulk-less thin body was studied. The relationship between dynamic charge loss and floating body effect during bit line disturbance was shown by experimental and simulation results. It …

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Synergistic effects of porous ferroelectric friction layer and intermediate layers for remarkable performance enhancement of triboelectric nanogenerator

Dong-Hyun Lee, Junseo Gu, Jeong‐Hoon Oh, Kwanlae Kim

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Fully Subtractive Ru Topvia Interconnects with Minimum 9 nm-Space Airgap for RC Performance and Reliability Enhancement as Post-Cu Interconnects

Koichi Motoyama, Jihwan P. Choi, Huai Huang, C. Penny et autres

Minimum 18 nm pitch fully subtractive self-aligned Ru Topvia interconnects with embedded airgap have been demonstrated. It has been confirmed that Ru Topvia interconnects with Topvia trimming process can improve dielectric breakdown voltage between vias and adjacent lines, which is essential for …

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Research on Improving Abandonment Detection Accuracy with Object Detection and Tracking Technology

Jong-Hak Baek, Jeong‐Hoon Oh

실제 CCTV 영상에서의 객체 유기 탐지는 다양하고 복잡한 조건으로 인해 기존 기술로는 여러 가지 한계가 있었다. 이 논문에서는 공공장소에서 객체 탐지와 추적의 정확도를 높이기 위해 YOLOv8과 ByteTrack을 결합한 새로운 기법을 제안한 다. 이 방법은 감지된 물체의 움직임을 추적하고, 유클리드 거리 계산을 통해 …

Synergy of Polydopamine-Assisted Additive Modification and Hierarchical-Morphology Poly(Vinylidene Fluoride) Nanofiber Mat for Ferroelectric-Assisted Triboelectric Nanogenerator

Junseo Gu, Dong-Hyun Lee, Jeong‐Hoon Oh, Hyeokjun Si et autres

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Tinnitus reduction after active bone-conduction implantation in patients with single-sided deafness: a prospective multicenter study

Jungho Ha, Moo Kyun Park, Shi Nae Park, Hyong‐Ho Cho et autres

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A Metal Dual Work-Function Gate (MDWG) for the Continuous Scaling of DRAM Cell Transistors

Junsoo Kim, Hyun Jung Lee, Sung Ho Jang, Jun Bum Lee et autres

The current dual work function gate (DWFG), utilizing Poly Si, which is applied as a standard in conventional DRAM products, is facing the issue of an exponential increase in word line (WL) resistance. For the continuous scale-down of DRAM cell transistors, we …

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