Physical and Mathematical Fundamentals
B. Lemaitre, Christoph Sohrmann, Lutz Muche, Joachim Haase
de (code pays fourni par la source)
1 citation
B. Lemaitre
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9Publications signalées
64Citations signalées
1Affiliations récentes
Les institutions déclarées
Les domaines associés
Semiconductor materials and devicesAdvancements in Semiconductor Devices and Circuit DesignSilicon Carbide Semiconductor TechnologiesLow-power high-performance VLSI designElectronic Packaging and Soldering Technologies
Les publications récentes
Impact of process variations and long term degradation on 6T-SRAM cells
Thomas M. Fischer, Alexander Olbrich, Georg Georgakos, B. Lemaitre et autres
Abstract. In modern deep-submicron CMOS technologies voltage scaling can not keep up with the scaling of the dimensions of transistors. Therefore the electrical fields inside the transistors are not constant anymore, while scaling down the device area. The rising electrical fields bring …
de (code pays fourni par la source)
4 citations
Advances in radio science
Modelling of the parametric yield in decananometer SRAM-Arrays
Thomas M. Fischer, Th. Nirschl, B. Lemaitre, Doris Schmitt‐Landsiedel
Abstract. In today's decananometer (90 nm, 65 nm, ...), CMOS technologies variations of device parameters play an ever more important role. Due to the demand for low leakage systems, supply voltage is decreased on one hand and the transistor threshold voltage is …
de (code pays fourni par la source)
2 citations
Advances in radio science
'System on a chip' technology platform for 0.18 μm digital, mixed signal and eDRAM applications
Reinhard Mahnkopf, K.-H. Allers, M. Armacost, Adam Augustin et autres
A 0.18 /spl mu/m high performance/low power technology platform is described which allows 'system on a chip integration' for a broad spectrum of products. Based on a generic digital process additional modules can be added in a modular and cost effective-manner for …
us (code pays fourni par la source)
13 citations
Description of the bias dependent overlap capacitance at LDD MOSFETs for circuit applications
Philipp H. Klein, Karel Hoffmann, B. Lemaitre
An analytical charge description for the bias dependent overlap regions at MOSFETs with LDD(S) configuration for circuit applications is presented. Furthermore an indirect method for the extraction of the LDD(S) parameters is derived. By simulating a fundamental amplifier circuit, it is demonstrated, …
de (code pays fourni par la source)
14 citations
An improved analytical LDD-MOSFET model for digital and analog circuit simulation for all channel lengths down to deep-submicron
An improved analytical LDD (lightly doped drain)-MOSFET model for digital and analog circuit simulation in the deep-submicron region is described. This model includes all short and narrow channel effects and a substrate current model. Special emphasis was placed on the voltage-dependent effective …
de (code pays fourni par la source)
12 citations
A short channel charge LDD-MOSFET model for analog and digital circuits with low overdrive voltage
Philipp H. Klein, Karel Hoffmann, B. Lemaitre
A charge LDD-MOSFET model, based on an analytical surface potential formulation at source and drain, for all channel lengths down to deep submicron has been derived and implemented in the circuit simulator SABER. In contrast to all hitherto developed models, this model …
de (code pays fourni par la source)
3 citations
Influence of Fluorinated Gate Oxides on the Low Frequency Noise of MOS Transistors under Analog Operation
Ralf Brederlow, Walter Michael Weber, R. Jurk, Claus Dahl et autres
de (code pays fourni par la source)
11 citations
European Solid-State Device Research Conference
[Mechanical behavior of powders. Parametric study of the functioning of a mixture-reservoir--validation of conditions in the use of a mixture-reservoir of powders].
Belia Jiménez, Dominique Chulia, Christophe Jeannin, B. Lemaitre et autres
4 citations
PubMed
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