2026
article
OpenAlex
Xixi Zou, Ruobing Wang, S.-H. Chen, Ning Yu et autres
Achieving both high thermal stability and rapid switching remains a significant challenge for phase-change materials employed in high-temperature memory applications. In this study, we present a carbon-doped In–Sb–Te (CInST) phase-change material that combines fast switching characteristics inherent to In–Sb–Te material with enhanced …
cn
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Accès ouvert
2025
article
OpenAlex
Ruobing Wang, Ziqi Wan, Xixi Zou, S.-H. Chen et autres
Chalcogenide phase-change materials are capable of switching rapidly between a disordered amorphous phase and an ordered crystalline phase, associating with the pronounced differences in electrical and optical properties. The resistance contrast is widely used for data storage in phase-change memories (PCMs). As …
cn
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2008
article
OpenAlex
Simone Raoux, Geoffrey W. Burr, M. Breitwisch, Charles T. Rettner et autres
Nonvolatile RAM using resistance contrast in phase-change materials [or phase-change RAM (PCRAM)] is a promising technology for future storage-class memory. However, such a technology can succeed only if it can scale smaller in size, given the increasingly tiny memory cells that are …
us, tw, de
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2007
conference-paper
OpenAlex
Th. Nirschl, C.-F. Chen, Eric A. Joseph, M. Lamorey et autres
We discuss novel multi-level write algorithms for phase change memory which produce highly optimized resistance distributions in a minimum number of program cycles. Using a novel integration scheme, a test array at 4 bits/cell and a 32 kb memory page at 2 …
us, tw
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