Investigation of electrochemical etching properties of heavily oxygen-doped n-type GaN grown by oxide vapor phase epitaxy method
Sogo Yokoi, Shigeyoshi Usami, Masayuki Imanishi, Tomoaki Sumi et autres
0 citationsJapanese Journal of Applied Physics
Tomoaki Sumi
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39Publications signalées
235Citations signalées
1Affiliations récentes
Institutions déclarées
Domaines associés
GaN-based semiconductor devices and materialsGa2O3 and related materialsZnO doping and propertiesSemiconductor materials and devicesSilicon Carbide Semiconductor Technologies
Publications récentes
Evaluation of thermal and electrical properties of GaN grown using oxide vapor-phase epitaxy
Kosei Asao, Shigeyoshi Usami, Masayuki Imanishi, Mihoko Maruyama et autres
1 citationJournal of Applied Physics
Causes of Leakage Current in Vertical GaN P–N Diode under Reverse Bias
Tomoaki Sumi, Hiroyuki Handa, Masahiro Ogawa, Naohiro Tsurumi et autres
0 citationsphysica status solidi (b)
High-speed and long-time growth of GaN by suppressing gas-phase reaction in the oxide vapor phase epitaxy method
Shigeyoshi Usami, Ayumu Shimizu, Ritsuko Higashiyama, Masayuki Imanishi et autres
6 citationsJapanese Journal of Applied Physics
Causes of Leakage Current in Vertical GaN P–N Diode under Reverse Bias
Tomoaki Sumi, Hiroyuki Handa, Masahiro Ogawa, Naohiro Tsurumi et autres
0 citationsphysica status solidi (b)
Effect of Substrate Carrier Concentration on Conductivity Modulation in GaN
Shigeyoshi Usami, Hiroshi Ohta, Hirotaka Watanabe, Junichi Takino et autres
0 citations
Effects of adding methane on the growth and electrical properties of GaN in oxide vapor phase epitaxy
Shigeyoshi Usami, Ritsuko Higashiyama, Masayuki Imanishi, Junichi Takino et autres
3 citationsJournal of Applied Physics
Origin of Black Color in Heavily Doped n‐Type GaN Crystal
Tomoaki Sumi, Junichi Takino, Yoshio Okayama, Shigeyoshi Usami et autres
2 citationsphysica status solidi (b)
Thermodynamic analysis of oxide vapor phase epitaxy of GaN
Y. Sakurai, Shigeyoshi Usami, Masayuki Imanishi, Tomoaki Sumi et autres
4 citationsJournal of Applied Physics
Influence of oxygen-related defects on the electronic structure of GaN
Satoshi Ohata, Takahiro Kawamura, Toru Akiyama, Shigeyoshi Usami et autres
6 citationsJapanese Journal of Applied Physics
Effect of additional N2O gas on the suppression of polycrystal formation and high-rate GaN crystal growth by OVPE method
Ayumu Shimizu, Akira Kitamoto, Masahiro Kamiyama, Shintaro Tsuno et autres
5 citationsJournal of Crystal Growth
Floral design GaN crystals: low-resistive and low-dislocation-density growth by oxide vapor phase epitaxy
Junichi Takino, Tomoaki Sumi, Yoshio Okayama, Akira Kitamoto et autres
17 citationsJapanese Journal of Applied Physics
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