Nobuyoshi Saito

Hydrogen Overflow as a Novel Negative V th Shift Mechanism in PBTI Universal to Planar and Vertical IGZO FETs

Reika Ichihara, Akinori Kamiyama, Takao Kosaka, Hiroki Tokuhira et autres

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Highly stackable Oxide-semiconductor Channel Transistor Technology for Future High-density and Low-power 3D DRAM

Mutsumi Okajima, Takamitsu Ochi, Tsuyoshi Sugisaki, Takanori Akita et autres

We demonstrate a highly stackable and ultra-low leakage oxide-semiconductor channel transistor technology for 3D Oxide-semiconductor Channel Transistor DRAM (OCTRAM). It uses a replacement-type InGaZnO cell transistor with a novel Channel-Side WL (CSWL) configuration designed for Z-pitch scaling. This approach reduces process cost …

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Amorphous Oxide Semiconductor TFTs for BEOL Transistor Applications

Nobuyoshi Saito, Keiji Ikeda

This chapter describes our approaches for the applications of amorphous oxide semiconductor (AOS) channel thin-film transistors (TFTs) to the back end of line (BEOL) in Si complementary metal-oxide semiconductor (CMOS) large-scale integrations (LSIs). Firstly, to improve the H 2 -anneal immunity of …

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High thermal stability of doped oxide semiconductor for monolithic 3D integration

Hiroki Kawai, Junji Kataoka, Nobuyoshi Saito, Tomomasa Ueda et autres

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Source/Drain Contact Engineering of InGaZnO Channel BEOL Transistor for Low Contact Resistance and Suppressing Channel Shortening Effect

Yuta Sato, Hirokazu Fujiwara, Nobuyoshi Saito, Tomomasa Ueda et autres

We have demonstrated suppression of channel shortening and reduction of Source/Drain (S/D) parasitic resistance (Rpara) in InGaZnO (IGZO) channel FETs after high temperature annealing by inserting an InAlZnO (IAZO) contact layer (CL) between the S/D electrodes and the IGZO channel. Thanks to …

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7‐2: Invited Paper: A 40 nm Gate Length Surrounding Gate Vertical‐Channel FET Using Thermally Stable In‐Al‐Zn‐O Channel for 3D CMOS‐LSI Applications

Yuta Sato, Hirokazu Fujiwara, Nobuyoshi Saito, Tomomasa Ueda et autres

We have developed a CMOS back‐end‐of‐line (BEOL) process compatible oxide semiconductor channel FET with newly proposed In‐Al‐Zn‐O (IAZO) for 3D CMOS‐LSI applications. Compared with In‐Ga‐Zn‐O for active‐matrix display applications, IAZO channel has higher thermal stability (~420°C) suitable for BEOL transistors where suppression …

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[Young Scientist Presentation Award Speech] Demonstration of Surrounding Gate Vertical-Channel FET with Gate Length of 40 nm Using BEOL Process Compatible In-Al-Zn Oxide Channel

Hirokazu Fujiwara, Yuta Sato, Nobuyoshi Saito, Tomomasa Ueda et autres

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Design Principle of Channel Material for Oxide-Semiconductor Field-Effect Transistor with High Thermal Stability and High On-current by Fluorine Doping

H. Kawai, Hiroshi Fujiwara, J. Kataoka, Nobuyoshi Saito et autres

We propose material design guideline of oxide semiconductor field-effect transistor (OS-FET) based on first-principles calculation, and experimentally demonstrate excellent FET characteristics for the first time. Fluorine-doped In-Ga-Zn-O (IGZO) channel OS-FET exhibits both high thermal stability (>400°C) and high on-current at optimum F …

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Suppression of Channel Shortening and Reduction of S/D Parasitic Resistance in InGaZnO channel BEOL Transistor by Insertion of thermally stable InAlZnO Contact Layer

Yuta Sato, Hirokazu Fujiwara, Nobuyoshi Saito, Tomomasa Ueda et autres

2020 International Conference on Solid State Devices and Materials ,Suppression of Channel Shortening and Reduction of S/D Parasitic Resistance in InGaZnO channel BEOL Transistor by Insertion of thermally stable InAlZnO Contact Layer

Surrounding Gate Vertical-Channel FET With a Gate Length of 40 nm Using BEOL-Compatible High-Thermal-Tolerance In-Al-Zn Oxide Channel

Hirokazu Fujiwara, Yuta Sato, Nobuyoshi Saito, Tomomasa Ueda et autres

We have demonstrated, for the first time, a surrounding gate vertical-channel field-effect transistor (FET) with a gate length of 40 nm by introducing back-end-of-line (BEOL) process-compatible oxide semiconductor (OS) In-Al-Zn-O as a channel material. Fabricated FETs exhibited high scalability by excellent thermal …

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Surrounding Gate Vertical-Channel FET with Gate Length of 40 nm using BEOL Compatible High-Thermal-Tolerance In-Al-Zn Oxide Channel

Hirokazu Fujiwara, Yuta Sato, Nobuyoshi Saito, Tomomasa Ueda et autres

We have demonstrated, for the first time, a surrounding gate vertical-channel FET with gate length of 40 nm by introducing back-end-of-line (BEOL) process compatible novel oxide semiconductor (OS) In-Al-Zn-O as a channel material. Fabricated FETs exhibited high scalability by excellent thermal stability …

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High Performance In-Zn-O FET with High On-current and Ultralow (<10−20 A/μm) Off-state Leakage Current for Si CMOS BEOL Application

Nobuyoshi Saito, Tomoaki Sawabe, Junji Kataoka, Tomomasa Ueda et autres

We have demonstrated and experimentally verified the advantages of In-Zn-O (InZnO) channel compared with In-Ga-Zn-O (InGaZnO) channel for high performance oxide semiconductor channel field effect transistor (FET) with both ultralow off-state leakage current and high on-current. Compared with InGaZnO FET, high mobility …

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