Eknath Sarkar

A Process-Aware Hybrid Si/IGO Monolithic-3D 6T SRAM with BEOL Pass-Gates for the 2nm Node

Po‐Chuan Wang, Dongwon Jang, Eknath Sarkar, Alexei Svizhenko et autres

We propose a monolithic-3D (M3D) 6T SRAM at the 2nm node, integrating BEOL IGO pass-gates (PGs) with an all-silicon nanosheet latch, buried power rails (BPRs), and Ru interconnects. TCAD calibrated to a state-of-the-art double-gate IGO transistor with a tri-layer HfO$_2$/ZrO$_2$/HfO$_2$ (HZH) gate …

On-the-Fly Characterization and Modeling of PBTI/NBTI in BEOL Oxide FETs

Hyun Jae Lee, Hyeonwoo Park, Faaiq Waqar, Chengyang Zhang et autres

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Probing Polar Transitions in Ferroelectric HZO by Oxygen-Resolved STEM

Kaijun Yin, Jaewon Shin, Hyeonwoo Park, Eknath Sarkar et autres

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First Demonstration of Bit-Cost Scalable and BEOL-Compatible Monolithic 4-Tier FeRAM Operating at 125 °C

Eknath Sarkar, J. Sonawane, H. Park, E. Quezada et autres

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Backside-Compatible Oxide Vertical Channel-All-Around Transistors and Cylindrical Capacitors for On-Chip Voltage Conversion at High Power Density

Hung-Chun Chou, Song‐Hyeon Kuk, Chengyang Zhang, Jungyoun Kwak et autres

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Workload-Derived AC Bias Temperature Instability and Mechanism Contributions in BEOL Oxide Channel DRAM Access Transistors

Hyun Jae Lee, Faaiq Waqar, Hyeonwoo Park, Chengyang Zhang et autres

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Amorphous Oxide Semiconductor Transistors for Monolithic 3D Integrated Circuits

Omkar Phadke, Faaiq Waqar, Eknath Sarkar, Jungyoun Kwak et autres

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Improved AC PBTI in Si FinFETs with HfO 2 /ZrO 2 /HfO 2 Nanolaminate Gate Stack

H. J. Lee, Eknath Sarkar, Junsu Yu, Dyutimoy Chakraborty et autres

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High-Efficiency BEOL-Compatible On-Chip Switched Capacitor DC-DC Converter Using Planar and Vertical Oxide Transistors with Trench Capacitors

Sunbin Deng, Hung-Chun Chou, Chengyang Zhang, Jungyoun Kwak et autres

This work presents a breakthrough in on-chip point-of-load (PoL) DC-DC voltage conversion for heterogeneous 3D integrated circuits by leveraging BEOL-compatible transistor and trench capacitor architectures. This work presents indium-tin-oxide (ITO) planar transistors and vertical indium-gallium-oxide (IGO) transistors, achieving a specific on-resistance of …

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Fluid Imprint: A Reliability Bottleneck in Ferroelectric RAM Read Operation

Hyeonwoo Park, Jaewon Shin, Emmanuel Quezada, H. J. Lee et autres

This work presents a comprehensive analysis of fluid imprint as a critical reliability bottleneck in hafnium zirconium oxide (Hf,ZrO2)-based ferroelectric random-access memory (FeRAM). Unlike conventional, dwell-time-dependent imprint, fluid imprint manifests rapidly under repeated non-destructive read operations, inducing asymmetric shifts in coercive fields …

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DC and AC PBTI / NBTI Analysis for BEOL Oxide FETs via On-the-Fly Measurement and Modeling

Hyun Jae Lee, Hyeonwoo Park, Chengyang Zhang, Jaewon Shin et autres

We present an analysis framework for threshold voltage (Vth) degradation due to DC and AC BTI in BEOL-compatible amorphous oxide semiconductor (AOS) transistors. Our approach combines: (i) On-the-fly kHz-regime measurement of stress and relaxation transients; (ii) A linear recurrence model for AC …

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Overcoming Threshold Voltage -Performance-Stability Tradeoff with Double-Gate Gallium Doped In 2 O 3 MOSFETs using Tri-Layer HfO 2 -ZrO 2 -HfO 2 Gate Stack

Eknath Sarkar, Hyeonwoo Park, Abdullah Al Mamun, H. J. Lee et autres

We demonstrate double-gate (DG) amorphous oxide semiconductor (AOS) MOSFETs by employing a laminated HfO₂/ZrO₂/HfO₂ (HZH) gate stack, achieving a holistic enhancement in threshold voltage (VT) modulation, drive current, and reliability. Key accomplishments include attaining a ~400 mV positive VTshift, significantly lower equivalent …

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