High-Efficiency BEOL-Compatible On-Chip Switched Capacitor DC-DC Converter Using Planar and Vertical Oxide Transistors with Trench Capacitors

Le résumé fourni par la source

This work presents a breakthrough in on-chip point-of-load (PoL) DC-DC voltage conversion for heterogeneous 3D integrated circuits by leveraging BEOL-compatible transistor and trench capacitor architectures. This work presents indium-tin-oxide (ITO) planar transistors and vertical indium-gallium-oxide (IGO) transistors, achieving a specific on-resistance of 87 and 0.04 mΩ∙mm2for 12V and 3V voltage ratings, respectively. 3D trench Hf0.25Zr0.75O2flying capacitors with 97.9 fF/µm2capacitance density are demonstrated. By monolithically integrating enhancement- and depletion-mode ITO planar transistors, a 2:1 switched-capacitor DC-DC converters are experimentally demonstrated with ≥87.5% efficiency per stage. Circuit simulations using IGO vertical transistors and 3D trench Hf0.25Zr0.75O2capacitors exhibit 94.3% peak stage efficiency for 2:1 step-down conversion from 3 V, offering competitive BEOL-compatible active and passive device technologies for "active" backside power delivery.

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