Chang-Jun Park

Annealing ambient engineering for tuning forward conduction and reverse blocking in Ni/(Al0.4Ga0.6)2O3/4H-SiC heterojunction diodes

Minseok Kim, Chowdam Venkata Prasad, Hyeon-Do Kang, Jin-Woo Choi et autres

kr, tw (code pays fourni par la source)

Plasma-power-driven recovery of dry-etch damage and barrier uniformity in β-Ga2O3 Schottky barrier diodes

Yong Wook Kim, Chowdam Venkata Prasad, Jin-Woo Choi, Chang-Jun Park et autres

kr (code pays fourni par la source)

Post-deposition annealing-driven interface engineering in sputtered AlN films on 4H-SiC substrate for enhanced electrical performance

Ye-Jin Kim, Chowdam Venkata Prasad, Jihyun Kim, Chang-Jun Park et autres

kr, se (code pays fourni par la source)

Effects of post-deposition annealing ambient on the electrical and chemical properties of ZnO/4H-SiC heterojunction diodes

Chang-Jun Park, Chowdam Venkata Prasad, MINSEOK KIM, Jin-Woo Choi et autres

kr, tw (code pays fourni par la source)

Defect engineering in NiO/β-Ga2O3 p-n heterojunction diodes via post-deposition annealing for power electronics

Seung-Hyun Park, Chowdam Venkata Prasad, Minseok Kim, Soo-Young Moon et autres

kr (code pays fourni par la source)

First-principles insights into WS2/4H-SiC heterostructure

Geoffrey Tse, C. V. R. K. Prasad, Sunil Kumar, Nilesh Kumar Jaiswal et autres

This work investigates the structural and electronic characteristics of the WS 2 /4H-SiC heterostructure through first-principles calculations using density functional theory (DFT). To obtain reliable bandgap values, the hybrid HSE06 functional along with norm-conserving pseudopotentials was employed. The computational setup included a …

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Oxygen vacancy control engineering in Ga2O3/4H-SiC Schottky rectifiers

J. Kim, Jin-Woo Choi, Chowdam Venkata Prasad, Ye-Jin Kim et autres

This work investigates oxygen vacancy (VO) engineering in Ga2O3/4H-SiC heterojunction Schottky barrier diodes (HJ-SBDs) through post-deposition O2 annealing to enhance breakdown performance. Aerosol-deposited Ga2O3 films (∼900 nm) on n-type 4H-SiC substrates were annealed in O2 ambient at 800, 900, and 1000 °C. …

kr (code pays fourni par la source)

Temperature-dependent electrical analysis of SnO2/4H-SiC Schottky diodes: role of post-deposition annealing

Chang-Jun Park, Chowdam Venkata Prasad, Yejin Kim, Seunghyun Park et autres

kr, tw (code pays fourni par la source)

Interface engineering of 4H-SiC-based UV photodetectors: A comprehensive review

C. V. R. K. Prasad, Peyala Dharmaiah, Geon‐Hee Lee, Se-Rim Park et autres

Ultraviolet (UV) photodetectors based on wide-bandgap semiconductors are essential for next-generation sensing technologies operating in harsh and energy-limited environments. Because of its wide bandgap (3.26 eV), high thermal conductivity, and radiation tolerance, 4H-silicon carbide (4H-SiC) provides an ideal material foundation for realizing …

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Design and Optimization of Doping Concentration of the JFET Region of 4H-SiC VDMOSFETs

Hye-Won Lee, Y Kim, Chang-Jun Park, Ji‐Soo Choi et autres

The 4H-SiC VDMOSFET demonstrates a high reverse breakdown voltage (BV) due to the JFET region but experiences relatively high on-resistance (Ron). A widely adopted method to reduce the Ron is to uniformly increase the doping concentration of the JFET region, which results …

kr (code pays fourni par la source)

Improvement of Electrical Properties in 4H-SiC MOSFETs by Nitric Oxide Post-Oxidation Annealing

Chang-Jun Park, Young-Hun Cho, Ji-hyun Kim, Geon-hee Lee et autres

4H-Silicon carbide (4H-SiC) is a promising material for power and harsh environment devices owing to its superior material properties, including wide bandgap, high critical electric field, and high thermal conductivity. However, despite the advantages of 4H-SiC, its channel mobility is reduced due …

kr (code pays fourni par la source)

Reduction of Defects at the SiO₂/SiC Interface by MeV Electron Beam Irradiation

Cheolho Jeon, Ji-Hyun Nam, Wei Hua Song, Min-Seung Jung et autres