Michael Ira Current

Structural stability and tunable photoluminescence of Dy3+/Eu3+-doped BaY2O4 phosphors for high-temperature optoelectronic applications

Yee-Shin Chang, Chih-Peng Lin, Michael Ira Current, Tai-Chen Kuo

Defect-State and Electronic-Structure Engineering of β-Ga2O3 Thin Films via Zn/N Co-Doping for Deep-Ultraviolet Optoelectronic Materials

Shih-Syun Chen, Wen-Hsi Lee, Tai-Jui Sung, Michael Ira Current et autres

tw (code pays fourni par la source)

Defect-State and Electronic-Structure Modulation of β-Ga2O3 Thin Films via Zn/N Co-Doping toward Deep-Ultraviolet Optoelectronic Materials

Shih-Syun Chen, Won Suk Lee, Tai-Jui Sung, Michael Ira Current et autres

tw (code pays fourni par la source)

Defect Repair and Dopant Activation in Boron-Implanted Germanium through Integrated Microwave and Supercritical Fluid Treatment

Dung‐Sheng Tsai, Kuang‐Yen Chen, Michael Ira Current, T. Kuo

tw, jp (code pays fourni par la source)

Exploration of High‐Pressure Annealing and Microwave Annealing in Palladium Germano‐Silicide Formation for Si0.8Ge0.2‐Based Complementary Metal‐Oxide–Semiconductor Transistors

Tai‐Chen Kuo, Michael Ira Current

In this study, forming palladium germano‐silicide on Si0.8Ge0.2‐based complementary metal‐oxide semiconductor (CMOS) transistors by high‐pressure annealing compared to microwave annealing is investigated. Boron‐doped Si0.8Ge0.2 layers are epitaxially grown on n‐type Si wafers, achieving an initial boron concentration of 5 × 1015 cm−3, …

tw, us (code pays fourni par la source)

Investigation of the activation and diffusion of ion-implanted p-type and n-type dopants in germanium using high-pressure annealing

Tai‐Chen Kuo, Wen-Hsi Lee, Michael Ira Current

Abstract In this study, we investigate the effectiveness of high-pressure annealing (HPA) compared to microwave annealing (MWA) in activating n-type and p-type dopants in germanium. For phosphorus dopants, HPA at 500 °C significantly enhances the activation level, resulting in a reduction of …

tw, us (code pays fourni par la source)

Effects of Ion Channeling and Co-Implants on Ion Ranges and Damage in Si: Studies With PL, SRP, SIMS and MC Models

Michael Ira Current, Takuya Sakaguchi, Yoji Kawasaki, Viktor Samu et autres

This study uses photoluminescence (PL) and other carrier-recombination sensitive probes in combination with spreading resistance profiling (SRP), SIMS and IMSIL MC-calculations to monitor the ion range and damage levels in highly-channeled and random beam orientation 7.5 MeV B and 10 MeV P …

hu (code pays fourni par la source)

Investigating Dopant Behavior in Crystalline Germanium Via Microwave and High-Pressure Annealing

Tai Chen Kuo, Wen-Hsi Lee, Michael Ira Current

tw, jp (code pays fourni par la source)

Corrections to “Low-Temperature Microwave Annealing Processes for Future IC Fabrication—A Review” [Mar 14 651-665]

Yao‐Jen Lee, Ta-Chun Cho, Shang-Shiun Chuang, Fu-Kuo Hsueh et autres

The above article[1]presented data on microwave annealing of implanted ions in silicon. There are several typos in the figure captions and labels, and the authors would like to correct them. The text is correct, and the conclusion of[1]is not impacted by these …

tw (code pays fourni par la source)

Effects of Ion Channeling and Co-implants on Ion Ranges and Damage in Si: Studies with PL, SRP, SIMS and MC models

Michael Ira Current, Takuya Sakaguchi, Yoji Kawasaki, Viktor Samu et autres

This study uses photoluminescence (PL) and other carrier-recombination sensitive probes in combination with spreading resistance profiling (SRP), SIMS and IMSIL MC-calculations to monitor the ion range and damage levels in highly-channeled and random beam orientation 7.5 MeV B and 10 MeV P …

jp, hu (code pays fourni par la source)

Corrections to “Susceptor Coupling for the Uniformity and Dopant Activation Efficiency in Implanted Si Under Fixed-Frequency Microwave Anneal” [Feb 12 248-250]

Yao‐Jen Lee, Fu-Kuo Hsueh, Michael Ira Current, Ching‐Yi Wu et autres

In The above letter[1], the SIMS profiles in Fig. 1 are for diffusion characteristics of ion-implanted phosphorus before/after MWA. We did not mention the concentration in the text of the letter. However, the dose listed in the figure caption is incorrect. The …

tw (code pays fourni par la source)

Ion erosion and elemental purity of deposited Si films on Al

Walt Wriggins, Matthew Wong, Avery Green, John Schuur et autres

us (code pays fourni par la source)