Beibei Lv

Transition From Current Collapse-Limited to Capacitance-Limited Efficiency in GaN HEMTs via Field-Plate Engineering

Jiongjiong Mo, Beibei Lv, Zichen Guo, Zhiyu Wang et autres

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Modulating surface trapping and electric-field distribution in 0.1 μm GaN HEMTs via localized cap-layer engineering

Jiongjiong Mo, Beibei Lv, Xuran Zhao

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Integrated multi-omics analysis reveals the synergistic mechanism of Bacillus velezensis D44 in controlling peach brown rot

Huijuan Zhou, Zhengwen Ye, Xun Zhou, Qiaocai Zhang et autres

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Multi-omics reveals taxonomic and functional adaptations of soil microbiota to Bt toxin exposure

Luyao Wang, Ziteng Liang, Jingang Liang, Lei Ge et autres

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Modulating surface Trapping and Electric-Field Distribution in 0.1 µm GaN HEMTs via Localized Cap-Layer Engineering

Jiongjiong Mo, Beibei Lv, Xuran Zhao

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Bias- and Frequency-Dependent Optimization of Gate Length for Efficiency in GaN-on-SiC HEMTs With a Fit Predictive Model

Jiongjiong Mo, Beibei Lv, Xinran Chen, Xuran Zhao

The efficiency of GaN-on-SiC high-electron-mobility transistors (HEMTs) is limited by the combined influence of the trap-induced current collapse, knee-voltage walkout, and parasitic capacitances. While the gate-length scaling is known to affect these mechanisms, the optimum geometry for maximum power-added efficiency (PAE) under …

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Localized GaN Cap Etching With Gate-Recessed Structure for Enhanced High-PAE Performance and Trap Analysis in 0.15- μ m AlGaN/GaN HEMTs

Beibei Lv, Jiongjiong Mo

This article presents a comprehensive study on the impact of gate recessing strategies on the electrical performances and trap dynamics of 0.15-μm aluminum gallium nitride (AlGaN)/gallium nitride (GaN) high-electron-mobility transistors (HEMTs) for high power-added efficiency (PAE) applications. By comparing devices with varying …

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GaN cap impacts on gate leakage mechanisms in AlGaN/GaN high-electron mobility transistors

Beibei Lv, Siyuan Ma, Jiashun Lang, Faxin Yu et autres

In this Letter, the impacts of the GaN cap on the gate leakage mechanisms have been investigated in the recessed-gate AlGaN/GaN high-electron-mobility transistors. The recessed gate with GaN cap removal under the gate can be a way to shrink the gate-to-channel distance, …

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Bt toxins alter bacterial communities and their potential functions in earthworm intestines

Luyao Wang, Yixuan Fan, Lingli Zou, Lei Ge et autres

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Revealing the formation mechanisms of key flavor components during the fermentation of bamboo shoots by combining flavoromics and metagenomics

Cuiwen Jian, Minghao Sun, Ting Ma, Wenxuan Wang et autres

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A Review of the Nutritional Composition, Storage Challenges, Processing Technology and Widespread Use of Bamboo Shoots

Ting Ma, Wenfeng Mo, Beibei Lv, Wenxuan Wang et autres

Bamboo shoots, as the young bamboo stems, are rich in protein, fiber, vitamins, and minerals, as well as many bioactive substances beneficial to health, and are gaining in importance worldwide as a healthy food and dietary supplement. However, fresh bamboo shoots lignify …

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Nitride spacer aided 0.15 μm AlGaN/GaN HEMT fabrication with optimized gate patterning process

Beibei Lv, Lixing Zhang, Jiongjiong Mo

I-line stepper is widely used in large scale device manufacturing with limited achievable critical dimension by itself. With the aid of the spacer sidewall, the critical dimension can be further shrunk down. Spacer sidewall aided process necessitates an additional deposition-etching process, which …

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