Marco Povoli

Improving UV Stability of SiO2/SiNx-Passivated Silicon Photodiodes Through Shallow Junction Implantation and Oxide Regrowth

Michael N. Getz, O. Koybasi, Fredrik Edhborg, Ørnulf Nordseth et autres

Induced-junction silicon photodiodes based on SiO2/SiNx surface passivation are attractive for high-accuracy radiometry, but their use in the deep ultraviolet is limited by UV-induced degradation of the dielectric stack. In this work, we investigate the degradation of SiO2/SiNx-passivated p-type silicon photodiodes under …

no, se, de, fi (code pays fourni par la source)

Improving UV Stability of SiO2/SiNx-Passivated Silicon Photodiodes Through Shallow Junction Implantation and Oxide Regrowth

Michael N. Getz, O. Koybasi, Fredrik Edhborg, Ørnulf Nordseth et autres

Induced-junction silicon photodiodes based on SiO2/SiNx surface passivation are attractive for high-accuracy radiometry, but their use in the deep ultraviolet is limited byUV-induced degradation of the dielectric stack. In this work, we investigate the degradation of SiO2/SiNx-passivated p-type silicon photodiodes under UV …

no, se, de (code pays fourni par la source)

Improving UV Stability of SiO2/SiNx-Passivated Silicon Photodiodes Through Shallow Junction Implantation and Oxide Regrowth

Michael N. Getz, O. Koybasi, Fredrik Edhborg, Ørnulf Nordseth et autres

Induced-junction silicon photodiodes based on SiO2/SiNx surface passivation are attractive for high-accuracy radiometry, but their use in the deep ultraviolet is limited byUV-induced degradation of the dielectric stack. In this work, we investigate the degradation of SiO2/SiNx-passivated p-type silicon photodiodes under UV …

no, se, de (code pays fourni par la source)

Supporting Data for the article "Improving UV Stability of SiO2/SiNx-Passivated Silicon Photodiodes Through Shallow Junction Implantation and Oxide Regrowth"

Dr. Michael Getz, O. Koybasi, Fredrik Edhborg, Ørnulf Nordseth et autres

Data sets supporting the article: Improving UV Stability of SiO2/SiNx-Passivated Silicon Photodiodes Through Shallow Junction Implantation and Oxide Regrowth.

no, se, de, fi (code pays fourni par la source)

Supporting Data for the article "Improving UV Stability of SiO2/SiNx-Passivated Silicon Photodiodes Through Shallow Junction Implantation and Oxide Regrowth"

Dr. Michael Getz, O. Koybasi, Fredrik Edhborg, Ørnulf Nordseth et autres

Data sets supporting the article: Improving UV Stability of SiO2/SiNx-Passivated Silicon Photodiodes Through Shallow Junction Implantation and Oxide Regrowth.

no, se, de, fi (code pays fourni par la source)

Solid State microdosimetry for particle therapy: 25 years of developments at Centre for Medical Radiation Physics

Linh T. Tran, Vladimir Pan, James Vohradsky, Marco Petasecca et autres

Over the past 25 years, the Centre for Medical Radiation Physics at the University of Wollongong has developed the MicroPlus™ microdosimetric probe, based on a silicon on insulator (SOI) microdosimeter incoorporating 3D micron sized sensitive volumes (SVs) arrays that mimic cell nucleus …

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Investigation of Graphene as a Shielding Material for Space Environments

Abdelrahman M. BaniHani, Dylan Hill, Vladimir Pan, James Vohradsky et autres

This work investigates the radiation shielding efficiency of High-Density Polyethylene (HDPE)/Graphene, carbon fibre, and polyethylene materials. The composite HDPE Graphene was studied both as a substitute layer in the ISS wall/Columbus shielding configuration and as an additional layer serving as intravehicular spacesuits …

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Microdosimetry of Very-High-Energy Heavy Ion Beams for Electronics Testing Using Silicon-on-Insulator Detectors

Andreas Waets, Natalia Emriskova, Ruben Garcia Alia, Karolina Klimek et autres

Comparison of LEM and MKM based RBE-weighted doses from microdosimetric measurements with silicon 3D microdosimeter

E. Data, James Vohradsky, Benjamin James, Vladimir Pan et autres

Introduction: In carbon ion radiation therapy, the Local Effect Model (LEM) predicts higher value of Relative Biological Effectiveness (RBE) with respect to the Microdosimetric Kinetic Model (MKM) in most clinical situations. This work aims at comparing the MKM-based RBE-weighted dose calculated from …

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Microdosimetry of Very-High-Energy Heavy Ion Beams for Electronics Testing Using Silicon-on-Insulator Detectors

Andreas Waets, Natalia Emriskova, Rubén García Alía, Karolina Klimek et autres

This article explores the use of microdosimetry with a silicon-on-insulator (SOI) detector for characterizing very-high-energy (VHE) heavy ion beams used specifically for single event effect (SEE) testing of electronics. The detector was deployed at CERN’s heavy ion facility for radiation effects testing …

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Self-calibrating photodiodes and new measurement techniques will provide traceability in previously inaccessible areas in rapid development

Jarle Gran, Johanne Heitmann Solheim, Trinh Tran, O. Koybasi et autres

Photonics as a key enabling technology is driving the technological development in sensing, health, industry and environment. The development trend moves towards miniaturised and integrated measurement systems. This puts pressure on the metrology community; How can we assure measurement accuracy and SI …

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Evidence of charge multiplication in thin 25 μm × 25 μm pitch 3D silicon sensors

A. D. Gentry, M. Boscardin, M. R. Hoeferkamp, Marco Povoli et autres

Abstract Characterization measurements of 25 μm × 25 μm pitch 3D silicon sensors are performed, for devices with active thickness of 150 μm. Evidence of charge multiplication caused by impact ionization below the breakdown voltage is observed in sensors operated at -45 …

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