Yoshikazu Hosomura

A 1Tb 3b/Cell 3D-Flash Memory of more than 17Gb/mm2 bit density with 3.2Gbps interface and 205MB/s program throughput

Mario Sako, Takeshi Nakajima, Fumihiro Kono, Takumi Nakano et autres

A 210 + WL layers 1Tb 3b/cell 3D-Flash Memory achieves the high bit density of $\gt17$ Gb/mm2. Physical 8plane architecture realizes low read latency of 40us and high program throughput of 205MB. High interface speed of 3.2Gbps is accomplished by reducing DQ …

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A 151-mm$^{2}$ 64-Gb 2 Bit/Cell NAND Flash Memory in 24-nm CMOS Technology

Koichi Fukuda, Yoshihisa Watanabe, Eiichi Makino, Koichi Kawakami et autres

A 64-Gb MLC (2 bit/cell) NAND flash memory with the highest memory density to date as an MLC flash memory, has been successfully developed. To decrease the chip size, 2-physical-plane configuration with 16 KB wordline-length, a new bit-line hook-up architecture, and a …

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Metallic Transport in a Monatomic Layer of In on a Silicon Surface

Shiro Yamazaki, Yoshikazu Hosomura, Iwao Matsuda, Rei Hobara et autres

We have succeeded in detecting metallic transport in a monatomic layer of In on an Si(111) surface, Si(111)-sqrt[7]×sqrt[3]-In surface reconstruction, using the micro-four-point probe method. The In layer exhibited conductivity higher than the minimum metallic conductivity (the Ioffe-Regel criterion) and kept the …

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A 151mm2 64Gb MLC NAND flash memory in 24nm CMOS technology

Koichi Fukuda, Yoshihisa Watanabe, Eiichi Makino, Koichi Kawakami et autres

NAND flash memories are now indispensable for our modern lives. The application range of the storage memory devices began with digital still cameras and has been extended to USB memories, memory cards, MP3 players, cell phones including smart phones, netbooks, and so …

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Metallic Transport and Anderson Localization on In Atomic Layers on Silicon

Shiro Yamazaki, Yoshikazu Hosomura, Iwao Matsuda, Rei Hobara et autres

In situ resistance measurements of epitaxial cobalt silicide nanowires on Si(110)

Hiroyuki Okino, Iwao Matsuda, Rei Hobara, Yoshikazu Hosomura et autres

We have performed in situ resistance measurements for individual epitaxial CoSi2 nanowires (NWs) (approximately 60 nm wide and 5μm long) formed on a Si(110) surface. Two- and four-point probe measurements were done with a multitip scanning tunneling microscope at room temperature. The …

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Resistance measurements of metallic silicide nanowires on a Si substrate with a four-tip scanning tunneling microscope

Hiroyuki Okino, Iwao Matsuda, Rei Hobara, Yoshikazu Hosomura et autres

We have measured electrical resistance of individual epitaxial CoSi2 nanowires (NWs) formed on a Si(110) surface in situ in ultrahigh vacuum, by two-, three-, and four-point probe methods using a multi-tip scanning tunneling microscope at room temperature. The NWs were electrically isolated …

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